公开(公告)号：US20040106290A1

公开(公告)日：2004-06-03

申请号：US10712211

申请日：2003-11-12

Applicant: STMicroelectronics S.r.l.

Inventor： Pietro Erratico ,  Enrico Sacchi ,  Flavio Villa ,  Gabriele Barlocchi ,  Pietro Corona

IPC: H01L021/302 ,  H01L021/461

CPC classification number: B81C1/00404

Abstract: The process comprises the steps of forming, on top of a semiconductor material wafer, a holed mask having a lattice structure and comprising a plurality of openings each having a substantially square shape and a side with an inclination of 45null with respect to the flat of the wafer; carrying out an anisotropic etch in TMAH of the wafer, using said holed mask, thus forming a cavity, the cross section of which has the shape of an upside-down isosceles trapezium; and carrying out a chemical vapor deposition using TEOS, thus forming a TEOS layer which completely closes the openings of the holed mask and defines a diaphragm overlying the cavity and on which a suspended integrated structure can subsequently be manufactured.

Abstract translation: 该方法包括以下步骤：在半导体材料晶片的顶部上形成具有格子结构的孔掩模，并且包括多个开口，每个开口具有大致正方形的形状，并且相对于平面的平面倾斜45° 晶圆; 在晶片的TMAH中进行各向异性蚀刻，使用所述带孔掩模，从而形成空腔，其横截面具有倒立的等腰梯形的形状; 并且使用TEOS进行化学气相沉积，由此形成TEOS层，其完全封闭了孔罩的开口，并且限定了覆盖在空腔上的隔膜，并且随后可以制造悬浮的一体结构。