公开(公告)号：US20130343128A1

公开(公告)日：2013-12-26

申请号：US13926280

申请日：2013-06-25

Applicant: STMicroelectronics S.r.l.

Inventor： Fabrizio TORRICELLI ,  Luigi COLALONGO ,  Anna RICHELLI ,  Zsolt KOVÀCS-VAJNA

IPC: G11C16/04

CPC classification number: G11C16/0425 ,  H01L29/42324 ,  H01L29/7881

Abstract: An embodiment of a nonvolatile-memory device includes: a body accommodating at least a first semiconductor well and a second semiconductor well; an insulating structure; and at least one nonvolatile memory cell. The cell includes: at least one first control region in the first well; conduction regions in the second well; and a floating gate region, which extends over portions of the first well and of the second well, is capacitively coupled to the first control region and forms a floating-gate memory transistor with the conduction regions. The insulating structure includes: first insulating regions, which separate the floating gate region from the first control region and from the second well outside the conduction regions and have a first thickness; and second insulating regions, which separate the floating gate region from the first well outside the first control region and have a second thickness greater than the first thickness.

Abstract translation: 非易失性存储器件的一个实施例包括：容纳至少第一半导体阱和第二半导体阱的主体; 绝缘结构; 和至少一个非易失性存储单元。 电池包括：第一阱中的至少一个第一控制区; 第二井的导电区域; 并且在第一阱和第二阱的部分上延伸的浮动栅极区域电容耦合到第一控制区域并且形成具有导电区域的浮栅存储器晶体管。 所述绝缘结构包括：第一绝缘区域，其将所述浮动栅极区域与所述第一控制区域分离，并且从所述第二阱阱区分开所述导电区域并具有第一厚度; 以及第二绝缘区域，其将浮置栅极区域与第一阱的第一控制区域外部分离，并且具有大于第一厚度的第二厚度。