公开(公告)号：US20220246770A1

公开(公告)日：2022-08-04

申请号：US17584185

申请日：2022-01-25

Applicant: STMicroelectronics S.r.l.

Inventor： Simone RASCUNA' ,  Gabriele BELLOCCHI ,  Marco SANTORO

IPC: H01L29/872 ,  H01L29/16 ,  H01L21/04 ,  H01L29/66

Abstract: A Junction Barrier Schottky device includes a semiconductor body of SiC having a first conductivity. An implanted region having a second conductivity, extends into the semiconductor body from a top surface of the semiconductor body to form a junction barrier diode with the semiconductor body. An electrical terminal is in ohmic contact with the implanted region and in direct electrical contact with the top surface, laterally to the implanted region, to form a Schottky diode with the semiconductor body. The implanted region is formed by a first and a second portion electrically connected directly to each other and aligned along an alignment axis transverse to the top surface. Orthogonally to the alignment axis, the first portion has a first maximum width and the second portion has a second maximum width greater than the first maximum width.