公开(公告)号：US20240103046A1

公开(公告)日：2024-03-28

申请号：US18371313

申请日：2023-09-21

Applicant: STMicroelectronics S.r.l.

Inventor： Placido DE VITA ,  Salvatore ABBISSO ,  Giovanni Luca TORRISI ,  Antonio Davide LEONE

IPC: G01R17/16 ,  G01R17/04 ,  G01R19/00 ,  G01R19/165 ,  G01R19/257

CPC classification number: G01R17/16 ,  G01R17/04 ,  G01R19/0023 ,  G01R19/16523 ,  G01R19/257 ,  G05F1/461

Abstract: A pre-driving stage drives one or more Field Effect Transistors in a power stage driving a load. A method for measuring current flowing in the Field Effect Transistors includes: measuring drain to source voltages of the one or more Field Effect Transistor; and measuring an operating temperature of the one or more Field Effect Transistor. The current flowing in the Field Effect Transistors is measured by: calculating the respective on drain to source resistance at the operating temperature as a function of the measured operating temperature and obtaining the current value as a ratio of the respective measured drain to source voltage over the calculated drain to source resistance at the operating temperature.