公开(公告)号：US11495310B2

公开(公告)日：2022-11-08

申请号：US17508775

申请日：2021-10-22

Applicant: STMicroelectronics S.r.l.

Inventor： Giovanni Matranga ,  Gianbattista Lo Giudice ,  Rosario Roberto Grasso ,  Alberto Jose' Di Martino

IPC: G11C16/34 ,  G11C16/30 ,  G11C16/14

Abstract: A method for erasing non-volatile memory including applying a first voltage pulse to a non-volatile memory cell to perform a first erase operation of the non-volatile memory cell and determining that a threshold voltage of the non-volatile memory cell is greater than a test voltage. The method further comprising updating a dedicated memory location with a value; and checking the non-volatile memory cell to determine whether the threshold voltage of the non-volatile memory cell is less than an erase-verify voltage to verify that the first erase operation has been performed successfully.

公开(公告)号：US11183255B1

公开(公告)日：2021-11-23

申请号：US16925059

申请日：2020-07-09

Applicant: STMicroelectronics S.r.l.

Inventor： Giovanni Matranga ,  Gianbattista Lo Giudice ,  Rosario Roberto Grasso ,  Alberto Jose′ Di Martino

IPC: G11C16/34 ,  G11C16/30 ,  G11C16/14

Abstract: A method for erasing non-volatile memory including applying a first voltage pulse to a non-volatile memory cell to perform a first erase operation of the non-volatile memory cell and determining that a threshold voltage of the non-volatile memory cell is greater than a test voltage. The method further comprising updating a dedicated memory location with a value; and checking the non-volatile memory cell to determine whether the threshold voltage of the non-volatile memory cell is less than an erase-verify voltage to verify that the first erase operation has been performed successfully.

公开(公告)号：US09240243B2

公开(公告)日：2016-01-19

申请号：US13860056

申请日：2013-04-10

Applicant: STMicroelectronics S.r.l.

Inventor： Giovanni Matranga ,  Mario Micciche ,  Rosario Roberto Grasso

IPC: G11C16/00 ,  G11C16/16 ,  G11C16/22

CPC classification number: G11C16/16 ,  G11C16/22

Abstract: A method for managing a flash memory device including pages of memory cells is described. The memory device may be erasable at the page level, and the pages may include operative pages for storing operative values and service pages for storing information relating to the erasing of the operative pages. In response to a request to erase selected operative pages, the method may include determining a service page in use among the service pages according to service information stored in the service pages, verifying the presence a service page to be erased, and applying an erasing pulse to each service page to be erased. The method may also include writing an address of the operative pages into the service page in use, erasing the selected operative pages, and writing a completion indication of the erasing of the selected operative pages into the service page in use.

Abstract translation: 描述了一种用于管理包括存储器单元的页面的闪存设备的方法。 存储器件可以在页面级别可擦除，并且页面可以包括用于存储操作值的操作页面和用于存储与操作页面的擦除有关的信息的服务页面。 响应于删除所选择的操作页面的请求，该方法可以包括根据服务页面中存储的服务信息来确定服务页面中使用的服务页面，验证是否存在要擦除的服务页面，以及应用擦除脉冲 到每个服务页面被擦除。 该方法还可以包括在使用中将操作页面的地址写入服务页面，擦除所选择的操作页面，以及将所选择的操作页面的擦除的完成指示写入正在使用的服务页面中。

公开(公告)号：US11328778B2

公开(公告)日：2022-05-10

申请号：US16925104

申请日：2020-07-09

Applicant: STMicroelectronics S.r.l.

Inventor： Gianbattista Lo Giudice ,  Giovanni Matranga ,  Rosario Roberto Grasso ,  Alberto Jose' Di Martino

IPC: G11C16/14 ,  G06F3/06 ,  G11C16/34 ,  G11C16/26 ,  G11C16/04

Abstract: A method of operating a non-volatile memory including having a first set of non-volatile memory cells and a second set of non-volatile memory cells. The first set of non-volatile memory cells and second set of non-volatile memory cells are associated with host addresses. Voltage levels are determined to erase the first and second sets of non-volatile memory cells. The first and second sets of non-volatile memory cells are disassociated from the host addresses. And, the first set of non-volatile memory cells is associated to another address based on the voltage level effective to erase the non-volatile memory cells.

公开(公告)号：US20220011943A1

公开(公告)日：2022-01-13

申请号：US16925104

申请日：2020-07-09

Applicant: STMicroelectronics S.r.l.

Inventor： Gianbattista Lo Giudice ,  Giovanni Matranga ,  Rosario Roberto Grasso ,  Alberto Jose' Di Martino

IPC: G06F3/06 ,  G11C16/04 ,  G11C16/14 ,  G11C16/26 ,  G11C16/34

Abstract: A method of operating a non-volatile memory including having a first set of non-volatile memory cells and a second set of non-volatile memory cells. The first set of non-volatile memory cells and second set of non-volatile memory cells are associated with host addresses. Voltage levels are determined to erase the first and second sets of non-volatile memory cells. The first and second sets of non-volatile memory cells are disassociated from the host addresses. And, the first set of non-volatile memory cells is associated to another address based on the voltage level effective to erase the non-volatile memory cells.

公开(公告)号：US20130272068A1

公开(公告)日：2013-10-17

申请号：US13860056

申请日：2013-04-10

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Giovanni Matranga ,  Mario Micciche ,  Rosario Roberto Grasso

IPC: G11C16/16

CPC classification number: G11C16/16 ,  G11C16/22

Abstract: A method for managing a flash memory device including pages of memory cells is described. The memory device may be erasable at the page level, and the pages may include operative pages for storing operative values and service pages for storing information relating to the erasing of the operative pages. In response to a request to erase selected operative pages, the method may include determining a service page in use among the service pages according to service information stored in the service pages, verifying the presence a service page to be erased, and applying an erasing pulse to each service page to be erased. The method may also include writing an address of the operative pages into the service page in use, erasing the selected operative pages, and writing a completion indication of the erasing of the selected operative pages into the service page in use.

Abstract translation: 描述了一种用于管理包括存储器单元的页面的闪存设备的方法。 存储器件可以在页面级别可擦除，并且页面可以包括用于存储操作值的操作页面和用于存储与操作页面的擦除有关的信息的服务页面。 响应于删除所选择的操作页面的请求，该方法可以包括根据服务页面中存储的服务信息来确定服务页面中使用的服务页面，验证是否存在要擦除的服务页面，以及应用擦除脉冲 到每个服务页面被擦除。 该方法还可以包括在使用中将操作页面的地址写入服务页面，擦除所选择的操作页面，以及将所选择的操作页面的擦除的完成指示写入正在使用的服务页面中。