公开(公告)号：US20030218924A1

公开(公告)日：2003-11-27

申请号：US10406632

申请日：2003-04-03

Applicant: STMicroelectronics SA

Inventor： Benjamin Duval ,  Fabrice Marinet

IPC: G11C029/00

CPC classification number: G11C17/18

Abstract: A method of programming a row of antifuse memory cells includes breaking down at least N antifuse elements in the memory cells. The breakdown includes the application of a breakdown voltage to the anode of each antifuse element. The antifuse elements are broken down sequentially by groups of P antifuse elements, with P being less than N and at least equal to 1. The antifuse elements of a same group simultaneously receive the breakdown voltage. The breakdown of a next group of antifuse elements immediately takes place after the breakdown of a previous group of antifuse elements.

Abstract translation: 一种编程反熔丝存储单元的行的方法包括在存储单元中分解至少N个反熔丝元件。 击穿包括向每个反熔丝元件的阳极施加击穿电压。 反熔丝元件依次由P个反熔丝元件分组，其中P小于N并且至少等于1.同一组的反熔丝元件同时接收击穿电压。 下一组反熔丝元件的故障立即发生在上一组反熔丝元件击穿之后。