公开(公告)号：US20190288079A1

公开(公告)日：2019-09-19

申请号：US16434920

申请日：2019-06-07

Applicant: STMicroelectronics SA

Inventor： Sotirios ATHANASIOU ,  Philippe GALY

IPC: H01L29/36 ,  H01L29/786

Abstract: A transistor includes a quasi-intrinsic region of a first conductivity type that is covered with an insulated gate. The quasi-intrinsic region extends between two first doped regions of a second conductivity type. A main electrode is provided on each of the two first doped regions. A second doped region of a second conductivity type is position in contact with the quasi-intrinsic region, but is electrically and physically separated by a distance from the two first doped regions. A control electrode is provided on the second doped region.