公开(公告)号：US20020100936A1

公开(公告)日：2002-08-01

申请号：US10061606

申请日：2002-02-01

Applicant: STMicroelectronics STMicroelectronics S.r.1.

Inventor： Ferruccio Frisina ,  Giuseppe Ferla

IPC: H01L031/119 ,  H01L031/113 ,  H01L031/062 ,  H01L029/94

CPC classification number: H01L29/7802 ,  G11C29/14 ,  G11C29/50 ,  G11C2029/0403 ,  H01L21/76202 ,  H01L21/8238 ,  H01L29/6656 ,  H01L29/66712

Abstract: Semiconductor power device including a semiconductor layer of a first type of conductivity, wherein a body region of a second type of conductivity including source regions of the first type of conductivity is formed, a gate oxide layer superimposed to the semiconductor layer with an opening over the body region, polysilicon regions superimposed to the gate oxide layer, and regions of a first insulating material superimposed to the polysilicon regions. The device includes regions of a second insulating material situated on a side of both the polysilicon regions and the regions of a first insulating material and over zones of the gate oxide layer situated near the opening on the body region, oxide regions interposed between the polysilicon regions and the regions of a second insulating material, oxide spacers superimposed to the regions of a second insulating material.