专利检索 ap:("SUMCO CORPORATION") AND inv:"Ayumi Kihara" 第 1 页

1.

发明授权
N-type silicon single crystal production method, n-type silicon single crystal ingot, silicon wafer, and epitaxial silicon wafer 有权

公开(公告)号：US11702760B2

公开(公告)日：2023-07-18

申请号：US16605320

申请日：2018-03-20

申请人： SUMCO CORPORATION

发明人： Koichi Maegawa , Yasuhito Narushima , Yasufumi Kawakami , Fukuo Ogawa , Ayumi Kihara

IPC分类号： C30B15/04 , C30B15/10 , C30B29/06 , C30B35/00 , H01L21/02

CPC分类号： C30B15/04 , C30B15/10 , C30B29/06 , C30B35/002 , C30B35/007 , H01L21/02002

摘要： In a producing method of an n-type monocrystalline silicon by pulling up a monocrystalline silicon from a silicon melt containing a main dopant in a form of red phosphorus to grow the monocrystalline silicon, the monocrystalline silicon exhibiting an electrical resistivity ranging from 0.5 mΩcm to 1.0 mΩcm is pulled up using a quartz crucible whose inner diameter ranges from 1.7-fold to 2.3-fold relative to a straight-body diameter of the monocrystalline silicon.