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公开(公告)号：US11814745B2
公开(公告)日：2023-11-14
申请号：US16622502
申请日：2018-06-15
申请人： SUMCO CORPORATION
发明人： Yasufumi Kawakami , Koichi Maegawa
摘要： A production method of monocrystalline silicon includes: growing the monocrystalline silicon having a straight-body diameter in a range from 301 mm to 330 mm that is pulled up through a Czochralski process from a silicon melt including a dopant in a form of red phosphorus; controlling a resistivity of the monocrystalline silicon at a straight-body start point to fall within a range from 1.20 mΩcm to 1.35 mΩcm; and subsequently sequentially decreasing the resistivity of the monocrystalline silicon to fall within a range from 0.7 mΩcm to 1.0 mΩcm at a part of the monocrystalline silicon.
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公开(公告)号：US11702760B2
公开(公告)日：2023-07-18
申请号：US16605320
申请日：2018-03-20
申请人： SUMCO CORPORATION
CPC分类号： C30B15/04 , C30B15/10 , C30B29/06 , C30B35/002 , C30B35/007 , H01L21/02002
摘要： In a producing method of an n-type monocrystalline silicon by pulling up a monocrystalline silicon from a silicon melt containing a main dopant in a form of red phosphorus to grow the monocrystalline silicon, the monocrystalline silicon exhibiting an electrical resistivity ranging from 0.5 mΩcm to 1.0 mΩcm is pulled up using a quartz crucible whose inner diameter ranges from 1.7-fold to 2.3-fold relative to a straight-body diameter of the monocrystalline silicon.
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公开(公告)号：US11242617B2
公开(公告)日：2022-02-08
申请号：US16471219
申请日：2017-10-30
申请人： SUMCO CORPORATION
摘要： A silicon single crystal production method includes pulling up and growing a silicon single crystal from silicon melt containing red phosphorus as a dopant by Czochralski process. The silicon single crystal is intended for a 200-mm-diameter wafer. The silicon single crystal includes a straight body with a diameter in a range from 201 mm to 230 mm. The straight body includes a straight-body start portion with an electrical resistivity in a range from 0.8 mΩcm to 1.2 mΩcm. A crystal rotation speed of the silicon single crystal is controlled to fall within a range from 17 rpm to 40 rpm for at least part of a shoulder-formation step for the silicon single crystal.
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公开(公告)号：US12116691B2
公开(公告)日：2024-10-15
申请号：US18376281
申请日：2023-10-03
申请人： SUMCO CORPORATION
发明人： Yasufumi Kawakami , Koichi Maegawa
摘要： A production method of monocrystalline silicon includes: growing the monocrystalline silicon having a straight-body diameter in a range from 301 mm to 330 mm that is pulled up through a Czochralski process from a silicon melt including a dopant in a form of arsenic; controlling a resistivity of the monocrystalline silicon at the straight-body start point to fall within a range from 2.50 mΩcm to 2.90 mΩcm; and subsequently sequentially decreasing the resistivity of the monocrystalline silicon to fall within a range from 1.6 mΩcm to 2.0 mΩcm at a part of the monocrystalline silicon.
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公开(公告)号：US11377755B2
公开(公告)日：2022-07-05
申请号：US16607205
申请日：2018-03-29
申请人： SUMCO CORPORATION
摘要： An n-type silicon single crystal production method of pulling up a silicon single crystal from a silicon melt containing red phosphorus as a principal dopant and growing the silicon single crystal by the Czochralski process, the method including: controlling electrical resistivity at a start position of a straight body portion of the silicon single crystal to 0.80 mΩcm or more and 1.05 mΩcm or less; and sequentially lowering the electrical resistivity of the silicon single crystal as the silicon single crystal is up and grown, thereby adjusting electrical resistivity of a part of the silicon single crystal to 0.5 mΩm or more and less than 0.6 mΩcm.
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公开(公告)号：US10916425B2
公开(公告)日：2021-02-09
申请号：US16484619
申请日：2017-11-14
申请人： SUMCO CORPORATION
摘要： A manufacturing method of monocrystalline silicon includes: disposing a flow regulator including a body in a form of an annular plate, provided under a heat shield, surrounding monocrystalline silicon; controlling an internal pressure of a chamber to 20 kPa or more during growth of monocrystalline silicon; keeping the flow regulator spaced from a dopant-added melt; and introducing inert gas into between the monocrystalline silicon and the heat shield to divide the inert gas into a first flow gas and a second flow gas.
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