ION IMPLANTER AND PARTICLE DETECTION METHOD

    公开(公告)号:US20220102112A1

    公开(公告)日:2022-03-31

    申请号:US17483293

    申请日:2021-09-23

    Abstract: There is provided an ion implanter including a beamline unit that transports an ion beam, an implantation processing chamber in which an implantation process of irradiating a wafer with an ion beam is performed, an illumination device that performs irradiation with illumination light in a direction intersecting with a transport direction of the ion beam in at least one of the beamline unit and the implantation processing chamber, an imaging device that generates a captured image captured by imaging a space through which the illumination light passes, and a control device that detects a particle which scatters the illumination light, based on the captured image.

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