公开(公告)号：US20220231040A1

公开(公告)日：2022-07-21

申请号：US17559101

申请日：2021-12-22

Applicant: SUNRISE MEMORY CORPORATION

Inventor： Vinod Purayath ,  Kenta Ohama ,  Yosuke Nosho

IPC: H01L27/11578 ,  H01L27/11573

Abstract: A VNOR memory string includes: (a) first and second pillars embedded in multiple composite layers, each composite layer comprising an insulator layer and a conductor layer, the first and second pillars each comprising a first semiconductor material of a first conductivity; (b) a second semiconductor layer of a second conductivity type opposite the first conductivity type on the outside of third pillar also embedded in the composite layers, the third pillar contacting both the first and second pillars; and (c) a storage layer provided between the second semiconductor layer and each of the conductor layer in the composite layers.