公开(公告)号：US09506777B2

公开(公告)日：2016-11-29

申请号：US14885656

申请日：2015-10-16

Applicant: Sagatek Co., Ltd.

Inventor： Kelvin Yi-Tse Lai ,  Jung-Hsiang Chen ,  Cheng-Szu Chen ,  Shu-Yi Weng

IPC: G01D5/24 ,  B81B7/00 ,  B81C1/00

CPC classification number: G01D5/24 ,  B81B7/008 ,  B81B2201/0235 ,  B81B2201/033 ,  B81B2207/012 ,  B81C1/00698

Abstract: A micro-electromechanical apparatus having a signal attenuation-proof function, and a manufacturing method and a signal attenuation-proof method thereof are disclosed. The micro-electromechanical apparatus includes a substrate, an insulation layer, and a sensing unit. The substrate has a doped region in which a majority of conductive carriers have the same polarity as an electronic signal. The insulation layer is located on the substrate, and the sensing unit is located above the insulation layer and forms the electronic signal when sensing a force.

Abstract translation: 公开了一种具有信号衰减防御功能的微机电装置及其制造方法和信号衰减防止方法。 微机电装置包括基板，绝缘层和感测单元。 衬底具有掺杂区域，其中绝大多数导电载体具有与电子信号相同的极性。 绝缘层位于基板上，感测单元位于绝缘层上方，并在感测到力时形成电子信号。