公开(公告)号：US06625361B2

公开(公告)日：2003-09-23

申请号：US10085371

申请日：2002-02-27

申请人： Sahng-gi Park ,  Jong-bae Kim ,  Doo-hee Cho ,  Yong-gyu Choi ,  Kyong-hon Kim ,  Bun Lee

发明人： Sahng-gi Park ,  Jong-bae Kim ,  Doo-hee Cho ,  Yong-gyu Choi ,  Kyong-hon Kim ,  Bun Lee

IPC分类号： G02B600

CPC分类号： G02F1/3558 ,  C03C25/1063 ,  C03C25/22 ,  C03C25/52 ,  G02B6/02 ,  G02B6/2826 ,  G02F1/0115

摘要： A method for forming two conductive films isolated electrically from each other on the surface of a fiber is provided. According to the method, a fiber is attached into the grooves on a silicon substrate using photoresist as glue. A photoresist pattern for a conductive film on the surface of the fiber is formed by a photolithography process. After wet-etching some amount of the fiber on the patterned area, which is needed for lifting off a metal film deposited on the unnecessary area, a metal film is deposited over whole area of the wafer. Removing photo-resist by a heated stripper solution leaves a metal film only on the patterned area of the fiber and detaches the fibers from the grooves of the wafer The second metal film on the other side of the fiber can be formed by the same procedures as the first metal film except that the deposited surface of the fiber must be attached to the grooves upside down. The poled fiber using two conductive films can be applied to manufacture elements used in opto-electronic and fiber communication devices such as a modulator, a tunable filter and a switch, an electric field sensor, and a nonlinear fiber optics device such as a frequency converter, a dispersion compensator.

公开(公告)号：US09530729B2

公开(公告)日：2016-12-27

申请号：US14859435

申请日：2015-09-21

申请人： Yong-gyu Choi ,  Hyun-chul Kim ,  Seung-hee Ko

发明人： Yong-gyu Choi ,  Hyun-chul Kim ,  Seung-hee Ko

IPC分类号： H01L23/522 ,  H01L23/528 ,  H01L27/108 ,  H01L27/02 ,  H01L21/768

CPC分类号： H01L23/5228 ,  H01L21/76897 ,  H01L23/5226 ,  H01L23/528 ,  H01L27/0207 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10855 ,  H01L27/10876 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor memory device includes a plurality of pattern structures respectively including a bit line and insulating spacers on sidewalls thereof protruding from a substrate. A plurality of insulating extension patterns are provided on opposing sidewalls of the pattern structures, and respectively extend from upper portions of the opposing sidewalls toward the substrate along the insulating spacers such that lower portions of the opposing sidewalls are free of the extension patterns. A plurality of buried contact patterns are provided on the substrate between the lower portions of the opposing sidewalls of adjacent pattern structures. Related fabrication methods are also discussed.

公开(公告)号：US09165934B2

公开(公告)日：2015-10-20

申请号：US14445829

申请日：2014-07-29

申请人： Yong-gyu Choi ,  Hyun-chul Kim ,  Seung-hee Ko

发明人： Yong-gyu Choi ,  Hyun-chul Kim ,  Seung-hee Ko

IPC分类号： H01L27/108

CPC分类号： H01L23/5228 ,  H01L21/76897 ,  H01L23/5226 ,  H01L23/528 ,  H01L27/0207 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10855 ,  H01L27/10876 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor memory device includes a plurality of pattern structures respectively including a bit line and insulating spacers on sidewalls thereof protruding from a substrate. A plurality of insulating extension patterns are provided on opposing sidewalls of the pattern structures, and respectively extend from upper portions of the opposing sidewalls toward the substrate along the insulating spacers such that lower portions of the opposing sidewalls are free of the extension patterns. A plurality of buried contact patterns are provided on the substrate between the lower portions of the opposing sidewalls of adjacent pattern structures. Related fabrication methods are also discussed.

摘要翻译： 半导体存储器件包括分别包括位线的多个图形结构和从衬底突出的侧壁上的绝缘间隔物。 多个绝缘延伸图案设置在图案结构的相对的侧壁上，并且分别从相对的侧壁的上部沿着绝缘间隔件延伸到衬底，使得相对的侧壁的下部分没有扩展图案。 在相邻图案结构的相对侧壁的下部之间的衬底上设置多个埋入接触图案。 还讨论了相关的制造方法。

公开(公告)号：US20160013131A1

公开(公告)日：2016-01-14

申请号：US14859435

申请日：2015-09-21

申请人： Yong-gyu Choi ,  Hyun-chul Kim ,  Seung-hee Ko

发明人： Yong-gyu Choi ,  Hyun-chul Kim ,  Seung-hee Ko

IPC分类号： H01L23/522 ,  H01L23/528 ,  H01L27/02

CPC分类号： H01L23/5228 ,  H01L21/76897 ,  H01L23/5226 ,  H01L23/528 ,  H01L27/0207 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10855 ,  H01L27/10876 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor memory device includes a plurality of pattern structures respectively including a bit line and insulating spacers on sidewalls thereof protruding from a substrate. A plurality of insulating extension patterns are provided on opposing sidewalls of the pattern structures, and respectively extend from upper portions of the opposing sidewalls toward the substrate along the insulating spacers such that lower portions of the opposing sidewalls are free of the extension patterns. A plurality of buried contact patterns are provided on the substrate between the lower portions of the opposing sidewalls of adjacent pattern structures. Related fabrication methods are also discussed.