公开(公告)号：US07468874B1

公开(公告)日：2008-12-23

申请号：US11269192

申请日：2005-11-08

Applicant: Sam Yonghon Guo

Inventor： Sam Yonghon Guo

IPC: H02H3/00 ,  H02H3/08 ,  H02H5/04 ,  H02H9/08

CPC classification number: H03K17/0822 ,  H03K17/6877

Abstract: A sensorless protection circuit comprises a detection module. The detection module receives a reference voltage signal and receives a load voltage signal from a MOSFET. The detection module generates a detection signal having a first state and a second state according to the reference voltage signal and the load voltage signal. A protection module receives the detection signal and maintains the MOSFET in an ON state when the detection signal is in the first state and transitions the MOSFET from the ON state to an OFF state when the detection signal is in the second state. The detection signal is in the second state when the MOSFET is in at least one of a current overload condition, an over temperature condition, a startup inrush current condition, and a short circuit condition.

Abstract translation: 无传感器保护电路包括检测模块。 检测模块接收参考电压信号并从MOSFET接收负载电压信号。 检测模块根据参考电压信号和负载电压信号产生具有第一状态和第二状态的检测信号。 当检测信号处于第一状态时，保护模块接收检测信号并将MOSFET保持在导通状态，并且当检测信号处于第二状态时，将MOSFET从导通状态转变到断开状态。 当MOSFET处于电流过载状态，过温状态，启动浪涌电流状态和短路状况中的至少一个时，检测信号处于第二状态。