公开(公告)号：US08129814B2

公开(公告)日：2012-03-06

申请号：US13085102

申请日：2011-04-12

申请人： Sameer Prakash Pendharkar ,  Eugen Pompiliu Mindricelu

发明人： Sameer Prakash Pendharkar ,  Eugen Pompiliu Mindricelu

IPC分类号： H01L27/095 ,  H01L29/792

CPC分类号： H01L27/0814 ,  H01L21/8249 ,  H01L27/0635 ,  H01L29/0619 ,  H01L29/47 ,  H01L29/872

摘要： An integrated circuit includes a Schottky diode having a cathode defined by an n-type semiconductor region, an anode defined by a cobalt silicide region, and a p-type region laterally annularly encircling the cobalt silicide region. The resulting p-n junction forms a depletion region under the Schottky junction that reduces leakage current through the Schottky diodes in reverse bias operation. An n+-type contact region is laterally separated by the p-type region from the first silicide region and a second cobalt silicide region is formed in the n-type contact region. The silicided regions are defined by openings in a silicon blocking dielectric layer. Dielectric material is left over the p-type region. The p-type region may be formed simultaneously with source/drain regions of a PMOS transistor.

摘要翻译： 集成电路包括具有由n型半导体区域限定的阴极的肖特基二极管，由硅化钴区域限定的阳极和横向环形地环绕硅化钴区域的p型区域。 所得的p-n结在肖特基结下形成耗尽区，在反向偏压操作中减少穿过肖特基二极管的漏电流。 n +型接触区域由p型区域与第一硅化物区域横向分离，并且在n型接触区域中形成第二钴硅化物区域。 硅化区域由硅阻挡介电层中的开口限定。 电介质材料留在p型区域上。 p型区域可以与PMOS晶体管的源极/漏极区域同时形成。

公开(公告)号：US20110186933A1

公开(公告)日：2011-08-04

申请号：US13085102

申请日：2011-04-12

申请人： Sameer Prakash Pendharkar ,  Eugen Pompiliu Mindricelu

发明人： Sameer Prakash Pendharkar ,  Eugen Pompiliu Mindricelu

IPC分类号： H01L27/06 ,  H01L29/872

CPC分类号： H01L27/0814 ,  H01L21/8249 ,  H01L27/0635 ,  H01L29/0619 ,  H01L29/47 ,  H01L29/872

摘要： An integrated circuit includes a Schottky diode having a cathode defined by an n-type semiconductor region, an anode defined by a cobalt silicide region, and a p-type region laterally annularly encircling the cobalt silicide region. The resulting p-n junction forms a depletion region under the Schottky junction that reduces leakage current through the Schottky diodes in reverse bias operation. An n+-type contact region is laterally separated by the p-type region from the first silicide region and a second cobalt silicide region is formed in the n-type contact region. The silicided regions are defined by openings in a silicon blocking dielectric layer. Dielectric material is left over the p-type region. The p-type region may be formed simultaneously with source/drain regions of a PMOS transistor.

摘要翻译： 集成电路包括具有由n型半导体区域限定的阴极的肖特基二极管，由硅化钴区域限定的阳极和横向环形地环绕硅化钴区域的p型区域。 所得的p-n结在肖特基结下形成耗尽区，在反向偏压操作中减少穿过肖特基二极管的漏电流。 n +型接触区域由p型区域与第一硅化物区域横向分离，并且在n型接触区域中形成第二钴硅化物区域。 硅化区域由硅阻挡介电层中的开口限定。 电介质材料留在p型区域上。 p型区域可以与PMOS晶体管的源极/漏极区域同时形成。

公开(公告)号：US20090194838A1

公开(公告)日：2009-08-06

申请号：US12023190

申请日：2008-01-31

申请人： Sameer Prakash Pendharkar ,  Eugen Pompiliu Mindricelu

发明人： Sameer Prakash Pendharkar ,  Eugen Pompiliu Mindricelu

IPC分类号： H01L29/872 ,  H01L21/8249 ,  H01L21/329

CPC分类号： H01L27/0814 ,  H01L21/8249 ,  H01L27/0635 ,  H01L29/0619 ,  H01L29/47 ,  H01L29/872

摘要： Cobalt silicide (CoSi2) Schottky diodes fabricated per the current art suffer from excess leakage currents in reverse bias. In this invention, an floating p-type region encircles each anode of a CoSi2 Schottky diode comprising of one or more CoSi2 anodes. The resulting p-n junction forms a depletion region under the Schottky junction that reduces leakage current through the Schottky diodes in reverse bias operation.

摘要翻译： 根据当前技术制造的硅化硅（CoSi 2）肖特基二极管在反向偏压下遭受过量的漏电流。 在本发明中，浮动p型区域包围由一个或多个CoSi 2阳极组成的CoSi 2肖特基二极管的每个阳极。 所得的p-n结在肖特基结下形成耗尽区，在反向偏压操作中减少穿过肖特基二极管的漏电流。

公开(公告)号：US07943472B2

公开(公告)日：2011-05-17

申请号：US12023190

申请日：2008-01-31

申请人： Sameer Pendharkar ,  Eugen Pompiliu Mindricelu

发明人： Sameer Pendharkar ,  Eugen Pompiliu Mindricelu

IPC分类号： H01L21/329 ,  H01L21/20

CPC分类号： H01L27/0814 ,  H01L21/8249 ,  H01L27/0635 ,  H01L29/0619 ,  H01L29/47 ,  H01L29/872

摘要： Cobalt silicide (CoSi2) Schottky diodes fabricated per the current art suffer from excess leakage currents in reverse bias. In this invention, an floating p-type region encircles each anode of a CoSi2 Schottky diode comprising of one or more CoSi2 anodes. The resulting p-n junction forms a depletion region under the Schottky junction that reduces leakage current through the Schottky diodes in reverse bias operation.

摘要翻译： 根据当前技术制造的硅化硅（CoSi 2）肖特基二极管在反向偏压下遭受过量的漏电流。 在本发明中，浮动p型区域包围由一个或多个CoSi 2阳极组成的CoSi 2肖特基二极管的每个阳极。 所得的p-n结在肖特基结下形成耗尽区，在反向偏压操作中减少穿过肖特基二极管的漏电流。