公开(公告)号：US12113064B2

公开(公告)日：2024-10-08

申请号：US17018486

申请日：2020-09-11

申请人： ROHM CO., LTD.

发明人： Keishi Watanabe ,  Junya Yamagami

IPC分类号： H01L27/08 ,  H01L29/861 ,  H01L29/866

CPC分类号： H01L27/0814 ,  H01L29/861 ,  H01L29/866

摘要： The present disclosure provides a diode chip capable of attaining excellent electrical characteristics.
The present disclosure provides a diode chip (1), including: a semiconductor chip (10) having a first main surface (11); a first pin junction portion (31) formed on a surface of the first main surface (11) with a first polarity direction; a first diode pair (37) (rectifier pair) including a first pn junction portion (35) separated from the first pin junction portion (31) and formed in the semiconductor chip (10) with the first polarity direction and a first reversed pin junction portion (38) connected to the first pn junction portion (35) in reversed direction and formed on the first main surface (11) with a second polarity direction; and a first junction separation trench (46) formed on the first main surface (11) in a manner of separating the first pin junction portion (31) and the first diode pair (37).

公开(公告)号：US20240321863A1

公开(公告)日：2024-09-26

申请号：US18736566

申请日：2024-06-07

申请人： Alpha and Omega Semiconductor (Cayman) Ltd.

发明人： Shekar Mallikarjunaswamy

IPC分类号： H01L27/02 ,  H01L27/08 ,  H01L29/66 ,  H01L29/861

CPC分类号： H01L27/0255 ,  H01L27/0262 ,  H01L27/0814 ,  H01L29/66098 ,  H01L29/861

摘要： A transient voltage suppressing (TVS) protection device includes a first high-side steering diode having an anode terminal coupled to a first protected node and a cathode terminal coupled to a second node; and a first low-side steering diode having a cathode terminal coupled to the first protected node and an anode terminal coupled to a third node, wherein the first low-side steering diode comprises a silicon controlled rectifier including alternating p-type and n-type regions, the outermost p-type region forming the anode terminal and the outermost n-type region forming the cathode terminal, the n-type region between a pair of p-type regions being substantially depleted at a bias voltage of zero volt.

公开(公告)号：US20240290783A1

公开(公告)日：2024-08-29

申请号：US17518657

申请日：2021-11-04

申请人： Diodes Incorporated

发明人： Kuo-Liang Chao ,  Pin-Hao Huang

IPC分类号： H01L27/08 ,  H01L21/822 ,  H01L29/66 ,  H01L29/872

CPC分类号： H01L27/0814 ,  H01L21/822 ,  H01L29/66143 ,  H01L29/8725

摘要： The disclosure provides a semiconductor package having an isolation structure comprising an isolation trench filled with dielectric material, where the isolation structure traverses the thickness of the isolated semiconductor dies.

公开(公告)号：US20240047201A1

公开(公告)日：2024-02-08

申请号：US18258784

申请日：2021-12-22

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE

发明人： Guy FEUILLET ,  Thierry BOUCHET ,  Matthew CHARLES ,  Roy DAGHER ,  Jesus ZUNIGA PEREZ

IPC分类号： H01L21/02 ,  H01L21/78 ,  H01L29/78 ,  H01L29/66 ,  H01L29/872 ,  H01L29/868 ,  H01L21/8252 ,  H01L27/08 ,  H01L27/085

CPC分类号： H01L21/02505 ,  H01L21/7806 ,  H01L29/7827 ,  H01L29/66212 ,  H01L29/872 ,  H01L29/868 ,  H01L29/66522 ,  H01L29/66204 ,  H01L21/0254 ,  H01L21/0245 ,  H01L21/02447 ,  H01L21/02488 ,  H01L21/02513 ,  H01L21/02458 ,  H01L21/02381 ,  H01L21/8252 ,  H01L27/0814 ,  H01L27/085

摘要： A method for producing a vertical component comprising with the basis of a III-N material, comprising providing platelets made of the III-N material obtained by epitaxy on pads, the platelets comprise at least first and second layers doped and stacked on one another in a vertical direction. The method further includes the production of a first electrode and the production of a second electrode located on the platelet and configured such that a current passing from one electrode to the other passes through at least the second layer in all of its thickness, the thickness being taken in the vertical direction.

公开(公告)号：US20230420442A1

公开(公告)日：2023-12-28

申请号：US18244524

申请日：2023-09-11

申请人： Infineon Technologies AG

发明人： Joost Adriaan Willemen

IPC分类号： H01L27/02 ,  H01L29/06 ,  H01L29/861 ,  H01L27/08

CPC分类号： H01L27/0248 ,  H01L29/0649 ,  H01L29/8618 ,  H01L27/0814

摘要： A semiconductor device includes “n” pairs of pn-junction structures, wherein the i-th pair includes two pn-junction structures of the i-th type, wherein the two pn-junction structures of the i-th type are anti-serially connected, wherein the pn-junction structure of the i-th type has an i-th junction grading coefficient mi. A first pair of the n pairs of pn-junction structures has a first junction grading coefficient m1 and a second pair of the n pairs of pn-junction structures has a second junction grading coefficient m2. The junction grading coefficients m1, m2 are adjusted to result in generation of a spurious third harmonic signal of the semiconductor device with a signal power level, which is at least 10 dB lower than a reference signal power level of the spurious third harmonic signal obtained for a reference case in which the first and second junction grading coefficients m1, m2 are 0.25.

公开(公告)号：US11830873B2

公开(公告)日：2023-11-28

申请号：US16583090

申请日：2019-09-25

申请人： STMICROELECTRONICS (TOURS) SAS

发明人： Arnaud Yvon

IPC分类号： H01L27/08 ,  H01L21/8252 ,  H01L27/06 ,  H01L29/861 ,  H01L29/872

CPC分类号： H01L27/0814 ,  H01L21/8252 ,  H01L27/0676 ,  H01L29/8611 ,  H01L29/872

摘要： The present description concerns an electronic device comprising a stack of a Schottky diode and of a bipolar diode, connected in parallel by a first electrode located in a first cavity and a second electrode located in a second cavity.

公开(公告)号：US11729964B2

公开(公告)日：2023-08-15

申请号：US17449352

申请日：2021-09-29

申请人： Micron Technology, Inc.

发明人： Silvia Borsari ,  Stian E. Wood ,  Haoyu Li ,  Yiping Wang

IPC分类号： H01L27/108 ,  H01L21/768 ,  H01L27/08 ,  H10B12/00

CPC分类号： H10B12/30 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76834 ,  H01L27/0814 ,  H10B12/03 ,  H10B12/0335 ,  H10B12/482 ,  H10B12/488 ,  H01L2221/1057

摘要： An apparatus comprises a conductive structure, another conductive structure, and a laminate spacer structure interposed between the conductive structure and the another conductive structure in a first direction. The laminate spacer structure comprises a dielectric spacer structure, another dielectric spacer structure, and an additional dielectric spacer structure interposed between the dielectric spacer structure and the another dielectric spacer structure. The additional dielectric spacer structure comprises at least one dielectric material, and gas pockets dispersed within the at least one dielectric material. Additional apparatuses, memory devices, electronic systems, and a method of forming an apparatus are also described.

公开(公告)号：US20180269286A1

公开(公告)日：2018-09-20

申请号：US15902333

申请日：2018-02-22

申请人： MIE FUJITSU SEMICONDUCTOR LIMITED

发明人： Katsuyoshi Matsuura

IPC分类号： H01L29/06 ,  H01L29/861 ,  H01L27/08 ,  H02M7/06

CPC分类号： H01L29/0692 ,  H01L27/0814 ,  H01L29/0607 ,  H01L29/0649 ,  H01L29/66136 ,  H01L29/861 ,  H01L29/8611 ,  H02M7/06

摘要： One aspect of a semiconductor device includes a plurality of first structures, in which each of the first structures includes: a first N-type region; a P-type region which is surrounded by the first N-type region; and a second N-type region which is surrounded by the P-type region. The first N-type region and the P-type region are wired, and the plurality of first structures are connected in parallel to form one diode.

公开(公告)号：US09972427B2

公开(公告)日：2018-05-15

申请号：US15271882

申请日：2016-09-21

申请人： ROHM CO., LTD.

发明人： Yasuhiro Kondo ,  Hiroshi Tamagawa ,  Hiroki Yamamoto

IPC分类号： H01C10/00 ,  H01C13/02 ,  H01C1/14 ,  H01C17/06 ,  H01G4/40 ,  H01G2/16 ,  H01C10/50 ,  H01C17/00 ,  H01F27/40 ,  H01G5/38 ,  H01L27/02 ,  H01L27/08 ,  H01F29/00 ,  H01G5/019 ,  H01L23/525 ,  H01L49/02

CPC分类号： H01C13/02 ,  H01C1/14 ,  H01C10/50 ,  H01C17/006 ,  H01C17/06 ,  H01F27/402 ,  H01F29/00 ,  H01G2/16 ,  H01G4/40 ,  H01G5/019 ,  H01G5/38 ,  H01L23/5256 ,  H01L27/0207 ,  H01L27/0814 ,  H01L28/20 ,  H01L2224/16225 ,  Y10T29/49099

摘要： A chip resistor includes a substrate, and a plurality of resistor elements each having a resistive film provided on the substrate and an interconnection film provided on the resistive film in contact with the resistive film. An electrode is provided on the substrate. Fuses disconnectably connect the resistor elements to the electrode. The resistive film is made of at least one material selected from the group of NiCr, NiCrAl, NiCrSi, NiCrSiAl, TaN, TaSiO2, TiN, TiNO and TiSiON.

公开(公告)号：US09929151B2

公开(公告)日：2018-03-27

申请号：US15467286

申请日：2017-03-23

申请人： AMAZING MICROELECTRONIC CORP.

发明人： Ming-Dou Ker ,  Woei-Lin Wu ,  James Jeng-Jie Peng ,  Ryan Hsin-Chin Jiang

IPC分类号： H01L27/08 ,  H01L29/861 ,  H01L27/02 ,  H01L29/06 ,  H01L29/78 ,  H01L27/06

CPC分类号： H01L27/0814 ,  H01L27/0255 ,  H01L27/0266 ,  H01L27/0629 ,  H01L27/0924 ,  H01L29/0657 ,  H01L29/0692 ,  H01L29/785 ,  H01L29/861

摘要： A self-balanced diode device includes a substrate, a doped well, at least one first conductivity type heavily doped fin and at least two second conductivity type heavily doped fins. The doped well is arranged in the substrate. The first conductivity type heavily doped fin is arranged in the doped well, arranged in a line along a first direction, and protruded up from a surface of the substrate. The second conductivity type heavily doped fins is arranged in the doped well, arranged in a line along a second direction intersecting the first direction, respectively arranged at two opposite sides of the first conductivity type heavily doped fin, and protruded up from the surface of the substrate. Each second conductivity type heavily doped fin and the first conductivity type heavily doped fin are spaced at a fixed interval.