专利检索 ap:("Sammy K Brown" OR "John D. Bryant" OR "Thomas Brumett") AND inv:"Thomas Brumett" 第 1 页

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发明授权
TeraHertz capable integrated circuit 有权

公开(公告)号：US11677016B1

公开(公告)日：2023-06-13

申请号：US17300474

申请日：2021-07-14

申请人： Sammy K Brown , John D. Bryant , Thomas Brumett

发明人： Sammy K Brown , John D. Bryant , Thomas Brumett

IPC分类号： H01L29/66 , H01L29/417 , H01J21/06 , H01L21/02

CPC分类号： H01L29/66977 , H01J21/06 , H01L21/02606 , H01L29/41725

摘要： A nano-vacuum tube (NVT) transistor comprising a source having a knife edge, a drain, and a channel formed between the source and the drain, the channel having a width to provide a pseudo-vacuum in a normal atmosphere. The NVT transistor utilizing a space charge plasma formed at the knife edge within the channel.