公开(公告)号：US11626572B2

公开(公告)日：2023-04-11

申请号：US17198552

申请日：2021-03-11

Applicant: Samsung Display Co., Ltd.

Inventor： Byeong Beom Kim ,  Min Ki Kim ,  Yu Ri Kim ,  Hoi Kwan Lee

IPC: H01L51/52 ,  H01L51/00 ,  H01L51/56

Abstract: In a method of fabricating a cover window, the method includes: forming, on a glass article having a flat upper surface, a mask layer including water glass and a recess portion having a partially recessed upper surface; and etching the mask layer and the glass article to form a cover window having a partially recessed upper surface.

公开(公告)号：US11557641B2

公开(公告)日：2023-01-17

申请号：US17060771

申请日：2020-10-01

Applicant: Samsung Display Co., LTD.

Inventor： Byeong Beom Kim ,  Min Ki Kim ,  Yu Ri Kim ,  Woo Suk Seo ,  Hoi Kwan Lee

IPC: H01L25/18 ,  H01L27/32 ,  H01L23/00

Abstract: A display device includes a display panel including panel pads adjacent to the side surface of a display panel; connection pads disposed on the side surface of the display panel and connected to the panel pads; and a circuit board disposed on the side surface of the display panel and including lead signal lines directly bonded to the connection pads, wherein the connection pads include a first connection pad, a second connection pad disposed on the first connection pad, and a third connection pad disposed on the second connection pad, and the first connection pad is in contact with corresponding one of the panel pads, and the third connection pad is directly bonded to corresponding one of the lead signal lines.

公开(公告)号：US11114472B2

公开(公告)日：2021-09-07

申请号：US16653916

申请日：2019-10-15

Applicant: Samsung Display Co., Ltd.

Inventor： Byeong Beom Kim ,  Heon Sik Ha ,  Jin Ho Hwang

IPC: H01L27/12

Abstract: A transistor panel may include a substrate, a transistor, a first inorganic buffer layer, and an inorganic fluorine-containing buffer layer. The transistor may overlap the substrate and may include a semiconductor layer. The first inorganic buffer layer may be disposed between the substrate and the semiconductor layer. The inorganic fluorine-containing buffer layer may be disposed between the first inorganic buffer layer and the semiconductor layer and may contain fluorine in a range of 0.5 at % to 2 at %.