公开(公告)号：US20230397477A1

公开(公告)日：2023-12-07

申请号：US18118865

申请日：2023-03-08

申请人： Samsung Display Co., LTD.

发明人： Chang Ho YI ,  Hyun Min CHO ,  Jung Woo HA ,  Tetsuhiro TANAKA ,  Seok Je SEONG

IPC分类号： H01L51/00 ,  H01L29/423 ,  H01L29/786

CPC分类号： H10K59/8792 ,  H01L29/42384 ,  H10K59/1213 ,  H10K59/1216 ,  H01L29/78633 ,  H01L29/7869

摘要： A display device includes a semiconductor layer on an opposite side to a light-blocking layer, the semiconductor layer including an active layer overlapping the light-blocking layer, a first gate insulator on an opposite side to a buffer film with the active layer therebetween, and a first gate electrode on an opposite side to the active layer with the first gate insulator therebetween, a side surface of the first gate insulator includes a first inclined portion contacting a first surface of the semiconductor layer, and a second inclined portion contacting the first inclined portion and the first gate electrode, and a first angle between the first surface of the semiconductor layer and the first inclined portion is less than a second angle between the first surface of the semiconductor layer and the second inclined portion.

公开(公告)号：US20210210518A1

公开(公告)日：2021-07-08

申请号：US16986933

申请日：2020-08-06

申请人： Samsung Display Co., LTD.

发明人： Tetsuhiro TANAKA ,  Yeong-Gyu KIM ,  Ki Seong SEO ,  Seung Hyun LEE ,  Chang Ho YI

IPC分类号： H01L27/12 ,  G09G3/32

摘要： A display device includes a polycrystalline semiconductor including a channel, a first electrode, and a second electrode of a driving transistor, a first gate insulating layer, a gate electrode of a driving transistor, a first electrode of a boost capacitor, a second gate insulating layer, a first interlayer insulating layer, an oxide semiconductor including a channel, a first electrode, and a second electrode of a second transistor, a channel, a first electrode, and a second electrode of a third transistor, and a second electrode of a boost capacitor, a third gate insulating layer disposed on the oxide semiconductor, a gate electrode of the second transistor overlapping the channel of the second transistor, a gate electrode of the third transistor overlapping the channel of the third transistor, and a second interlayer insulating layer disposed on the gate electrode of the second transistor and the gate electrode of the third transistor.

公开(公告)号：US20210265445A1

公开(公告)日：2021-08-26

申请号：US17031018

申请日：2020-09-24

申请人： Samsung Display Co., LTD.

发明人： Sang Hoon OH ,  Seung Gyu TAE ,  Hyun Woo KANG ,  Dong Hyeok LEE ,  Chang Ho YI

IPC分类号： H01L27/32

摘要： A display device may include a first pixel column disposed on a substrate, a second pixel column adjacent to the first pixel column, a third pixel column adjacent to the second pixel column, and a first wiring, a second wiring, and a third wiring respectively and electrically connected to the first pixel column, the second pixel column, and the third pixel column. Each of the first wiring, the second wiring, and the third wiring may include a first line, a second line electrically connected to the first line, the first line and the second line being disposed on different layers, and a third line electrically connected to the second line, the first line, the second line, and the third line being disposed on different layers.