公开(公告)号：US20210210518A1

公开(公告)日：2021-07-08

申请号：US16986933

申请日：2020-08-06

申请人： Samsung Display Co., LTD.

发明人： Tetsuhiro TANAKA ,  Yeong-Gyu KIM ,  Ki Seong SEO ,  Seung Hyun LEE ,  Chang Ho YI

IPC分类号： H01L27/12 ,  G09G3/32

摘要： A display device includes a polycrystalline semiconductor including a channel, a first electrode, and a second electrode of a driving transistor, a first gate insulating layer, a gate electrode of a driving transistor, a first electrode of a boost capacitor, a second gate insulating layer, a first interlayer insulating layer, an oxide semiconductor including a channel, a first electrode, and a second electrode of a second transistor, a channel, a first electrode, and a second electrode of a third transistor, and a second electrode of a boost capacitor, a third gate insulating layer disposed on the oxide semiconductor, a gate electrode of the second transistor overlapping the channel of the second transistor, a gate electrode of the third transistor overlapping the channel of the third transistor, and a second interlayer insulating layer disposed on the gate electrode of the second transistor and the gate electrode of the third transistor.

公开(公告)号：US20210257426A1

公开(公告)日：2021-08-19

申请号：US17160562

申请日：2021-01-28

申请人： SAMSUNG DISPLAY CO., LTD.

发明人： Tetsuhiro TANAKA ,  Yeong-Gyu KIM ,  Tae Sik KIM ,  Hee Yeon KIM ,  Ki Seong SEO ,  Seung Hyun LEE ,  Kyeong Woo JANG ,  Sug Woo JUNG

IPC分类号： H01L27/32 ,  H01L29/786

摘要： A display device includes a first thin film transistor disposed on a substrate. A first insulating interlayer covers lire first thin film transistor. An active pattern is disposed on the first insulating interlayer. The active pattern includes indium-gallium-zinc oxide (IGZO) having a thickness in a range of about 150 Å to about 400 Å. A gate insulation layer covers the active pattern A gate pattern is disposed on the gate insulation layer. A second insulating interlayer covers the gate pattern.