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公开(公告)号：US20230048817A1
公开(公告)日：2023-02-16
申请号：US17719849
申请日：2022-04-13
发明人： Keunwoo KIM , Taewook KANG , Jaeseob LEE , Sanggun CHOI
摘要： A display device includes a first active layer disposed on a substrate and including a source area, a resistance area, and a drain area spaced apart from the source area by the resistance area, a first gate electrode and a second gate electrode disposed on the first active layer and overlapping the first active layer, and a first power voltage electrode disposed on the first gate electrode and the second gate electrode and overlapping the resistance area in a cross-sectional view. In this case, the resistance area of the active layer and the first power voltage electrode may form a floating node capacitor. Accordingly, in a case that the first gate electrode and the second gate electrode form a dual gate transistor with the active layer, an instantaneous voltage increase may be suppressed and current leakage may be prevented.
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公开(公告)号：US20210249542A1
公开(公告)日：2021-08-12
申请号：US17086545
申请日：2020-11-02
发明人： Jaeseob LEE , Meejae KANG , Yoonho KHANG , Keunwoo KIM , Hanbit KIM , Thanhtien NGUYEN
IPC分类号： H01L29/786 , H01L27/32
摘要： A display device including: a first thin film transistor (TFT) including a first semiconductor layer and a first gate electrode, the first semiconductor layer including a first channel region, a first source region, and a first drain region; a third TFT including a third semiconductor layer and a third gate electrode, the third semiconductor layer including a third channel region, a third source region, and a third drain region, wherein a leakage current of the third TFT in an off-state is less than a leakage current of the first TFT in the off-state; and a pixel electrode connected to one of the first source region and the first drain region, wherein the one of the first source region and the first drain region is connected to the third TFT.
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