DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20240032326A1

    公开(公告)日:2024-01-25

    申请号:US18480493

    申请日:2023-10-03

    摘要: Provided are a display apparatus and a method of manufacturing the display apparatus. The display apparatus includes a first barrier layer including a first display area, a second display area including transmission areas, and a non-display area, a first base layer on a lower surface of the first barrier layer, and defining a first opening that overlaps the second display area, a second base layer on an upper surface of the first barrier layer, and defining second openings that respectively overlap the transmission areas, a second barrier layer on an upper surface of the second base layer and defining third openings that overlap the second openings, main pixel electrodes over the second barrier layer in the first display area, and auxiliary pixel electrodes over the second barrier layer in the second display area.

    DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20220085328A1

    公开(公告)日:2022-03-17

    申请号:US17353378

    申请日:2021-06-21

    IPC分类号: H01L51/52 H01L27/32 H01L51/56

    摘要: Provided are a display apparatus and a method of manufacturing the display apparatus. The display apparatus includes a first barrier layer including a first display area, a second display area including transmission areas, and a non-display area, a first base layer on a lower surface of the first barrier layer, and defining a first opening that overlaps the second display area, a second base layer on an upper surface of the first barrier layer, and defining second openings that respectively overlap the transmission areas, a second barrier layer on an upper surface of the second base layer and defining third openings that overlap the second openings, main pixel electrodes over the second barrier layer in the first display area, and auxiliary pixel electrodes over the second barrier layer in the second display area.

    DISPLAY APPARATUS
    4.
    发明申请

    公开(公告)号:US20230111736A1

    公开(公告)日:2023-04-13

    申请号:US17958518

    申请日:2022-10-03

    IPC分类号: H01L27/32 H01L51/56

    摘要: A display apparatus a substrate including a lower organic layer, a lower barrier layer, an upper organic layer, and an upper barrier layer, which are sequentially stacked on each other, a pixel circuit layer on the substrate, and a display element layer on the pixel circuit layer. The upper barrier layer includes a first inorganic barrier layer on the upper organic layer, a shielding layer on the first inorganic barrier layer, the shielding layer comprising an oxide semiconductor material, and a second inorganic barrier layer on the shielding layer.

    DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20230100985A1

    公开(公告)日:2023-03-30

    申请号:US17825510

    申请日:2022-05-26

    IPC分类号: H01L27/32 H01L51/00 H01L51/56

    摘要: A display panel according to an embodiment includes a substrate, a thin film transistor disposed on the substrate, and a light emitting element electrically connected to the thin film transistor. The substrate includes a first resin layer, a first barrier layer disposed on the first resin layer, a second resin layer including a lower portion disposed on the first barrier layer and an upper portion having a carbon content less than a carbon content of the lower portion, and a second barrier layer disposed on the second resin layer.

    DISPLAY PANEL, AND DISPLAY DEVICE INCLUDING THE SAME

    公开(公告)号:US20210143220A1

    公开(公告)日:2021-05-13

    申请号:US17156444

    申请日:2021-01-22

    IPC分类号: H01L27/32 H01L51/52

    摘要: A display panel including a glass substrate having an opening area, and a display area at least partially surrounding the opening area; a thin film transistor on the display area including a semiconductor layer and a gate electrode; a display element electrically connected to the thin film transistor; a multi-layer including an insulating layer and a lower insulating layer. The insulating layer is between the glass substrate and the display element and the lower insulating layer is between the glass substrate and the insulating layer; and a thin-film encapsulation layer covering the display element including an inorganic encapsulation layer and an organic encapsulation layer. The multi-layer includes a first groove between the opening area and the display area. A first width of a portion of the first groove in the lower insulating layer is greater than a second width of a portion of the first groove in the insulating layer.

    DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20240096267A1

    公开(公告)日:2024-03-21

    申请号:US18240624

    申请日:2023-08-31

    IPC分类号: G09G3/32 G09G3/20

    摘要: A display apparatus includes a first sub-pixel electrode, a metal bank layer in which a first opening overlapping the first sub-pixel electrode is defined, the metal bank layer including a first metal layer and a second metal layer on the first metal layer, an insulating layer between an outer portion of the first sub-pixel electrode and the metal bank layer, a first intermediate layer overlapping the first sub-pixel electrode through the first opening of the metal bank layer, a first opposite electrode disposed on the first intermediate layer through the first opening of the metal bank layer, and a low-reflective layer disposed on the second metal layer of the metal bank layer and having a reflectivity less than a reflectivity of the second metal layer.

    DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20230048817A1

    公开(公告)日:2023-02-16

    申请号:US17719849

    申请日:2022-04-13

    IPC分类号: H01L27/32 H01L51/56

    摘要: A display device includes a first active layer disposed on a substrate and including a source area, a resistance area, and a drain area spaced apart from the source area by the resistance area, a first gate electrode and a second gate electrode disposed on the first active layer and overlapping the first active layer, and a first power voltage electrode disposed on the first gate electrode and the second gate electrode and overlapping the resistance area in a cross-sectional view. In this case, the resistance area of the active layer and the first power voltage electrode may form a floating node capacitor. Accordingly, in a case that the first gate electrode and the second gate electrode form a dual gate transistor with the active layer, an instantaneous voltage increase may be suppressed and current leakage may be prevented.