公开(公告)号：US20240079529A1

公开(公告)日：2024-03-07

申请号：US18297748

申请日：2023-04-10

Applicant: Samsung Display Co., LTD.

Inventor： Ji Hyun HAM ,  Moon Jung AN ,  Jin Seok PARK ,  Hee Keun LEE ,  Sung Chan JO ,  Sang Wook HAN

IPC: H01L33/46 ,  H01L25/16

CPC classification number: H01L33/46 ,  H01L25/167

Abstract: A light-emitting element includes a first semiconductor layer, a light-emitting layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the light-emitting layer, a device electrode layer disposed on the second semiconductor layer, a reflective electrode layer disposed on the device electrode layer, an insulating film surrounding a side surface of the light-emitting layer, a side surface of the second semiconductor layer, and a side surface of the device electrode layer, and a reflective layer surrounding a side surface of the insulating film, wherein the side surface of the device electrode layer is aligned with a side surface of the reflective electrode layer.

公开(公告)号：US20250022985A1

公开(公告)日：2025-01-16

申请号：US18440136

申请日：2024-02-13

Applicant: Samsung Display Co., LTD.

Inventor： Jin Seok PARK ,  Moon Jung AN ,  Hoo Keun PARK

IPC: H01L33/38 ,  H01L25/16 ,  H01L33/40 ,  H01L33/62

Abstract: The disclosure provides a light emitting element array, a display device, and a method of manufacturing the display device. A light emitting element array includes a base substrate, each of a plurality of light emitting elements including a light emitting element rod including a third semiconductor layer, a second semiconductor layer, a light emitting layer, and a first semiconductor layer sequentially stacked on the base substrate and an insulating layer surrounding the light emitting element rod and a connection electrode disposed on the first semiconductor layer of each of the plurality of light emitting elements, wherein a diameter of the connection electrode is greater than a diameter of the light emitting element, and the connection electrode surrounds a side surface of the first semiconductor layer and a side surface of the light emitting layer.