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公开(公告)号：US20220068892A1
公开(公告)日：2022-03-03
申请号：US17244397
申请日：2021-04-29
发明人： Hyung Rae CHA , Dong Uk KIM , Sung Ae JANG , Ji Hyun HAM
摘要： A light-emitting element includes a first end portion and a second end portion disposed in a length direction of the light-emitting element, a first electrode corresponding to the first end portion, a first semiconductor layer on the first electrode, an active layer on the first semiconductor layer, a second semiconductor layer on the active layer, and a second electrode on the second semiconductor layer and corresponding to the second end portion. The second electrode includes a first layer on the first semiconductor layer, and a second layer on the first layer. The first semiconductor layer includes a p-type semiconductor layer doped with a p-type dopant. The second semiconductor layer includes an n-type semiconductor layer doped with an n-type dopant. The first electrode is in ohmic contact with the first semiconductor layer. The second electrode is in ohmic contact with the second semiconductor layer.
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2.发明公开公开(公告)号：US20240266332A1
公开(公告)日：2024-08-08
申请号：US18620480
申请日：2024-03-28
发明人： Hyung Rae CHA , Dong Uk KIM , Sung Ae JANG , Ji Hyun HAM
CPC分类号： H01L25/0753 , H01L27/1214 , H01L33/007 , H01L33/0093 , H01L33/22 , H01L33/42 , H01L33/44 , H01L33/62 , H01L2933/0016 , H01L2933/0025
摘要： A light-emitting element includes a first end portion and a second end portion disposed in a length direction of the light-emitting element, a first electrode corresponding to the first end portion, a first semiconductor layer on the first electrode, an active layer on the first semiconductor layer, a second semiconductor layer on the active layer, and a second electrode on the second semiconductor layer and corresponding to the second end portion. The second electrode includes a first layer on the first semiconductor layer, and a second layer on the first layer. The first semiconductor layer includes a p-type semiconductor layer doped with a p-type dopant. The second semiconductor layer includes an n-type semiconductor layer doped with an n-type dopant. The first electrode is in ohmic contact with the first semiconductor layer. The second electrode is in ohmic contact with the second semiconductor layer.
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公开(公告)号：US20220190204A1
公开(公告)日：2022-06-16
申请号：US17444803
申请日：2021-08-10
发明人： Hyung Rae CHA , Dong Uk KIM , Young Chul SIM , Sung Ae JANG , Ji Hyun HAM
摘要： A light-emitting element includes: a first semiconductor layer including a first type semiconductor; a second semiconductor layer including a second type semiconductor different from the first type semiconductor; an active layer between one surface of the first semiconductor layer and one surface of the second semiconductor layer; a first electrode layer on another surface of the second semiconductor layer and having a first cross-sectional area; and a second electrode layer on another surface of the first semiconductor layer and having a second cross-sectional area smaller than the first cross-sectional area. A side surface of the light-emitting element defined by the first semiconductor layer, the active layer, the second semiconductor layer, and the second electrode layer is perpendicular to a main surface of the first electrode layer.
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公开(公告)号：US20240079529A1
公开(公告)日：2024-03-07
申请号：US18297748
申请日：2023-04-10
发明人： Ji Hyun HAM , Moon Jung AN , Jin Seok PARK , Hee Keun LEE , Sung Chan JO , Sang Wook HAN
CPC分类号： H01L33/46 , H01L25/167
摘要： A light-emitting element includes a first semiconductor layer, a light-emitting layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the light-emitting layer, a device electrode layer disposed on the second semiconductor layer, a reflective electrode layer disposed on the device electrode layer, an insulating film surrounding a side surface of the light-emitting layer, a side surface of the second semiconductor layer, and a side surface of the device electrode layer, and a reflective layer surrounding a side surface of the insulating film, wherein the side surface of the device electrode layer is aligned with a side surface of the reflective electrode layer.
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5.发明公开公开(公告)号：US20230369542A1
公开(公告)日：2023-11-16
申请号：US18024544
申请日：2020-12-16
发明人： Hyun Min CHO , Dong Uk KIM , Se Young KIM , Seung Geun LEE , Seung A LEE , Yo Han LEE , Sung Ae JANG , Hyung Rae CHA , Ji Hyun HAM
CPC分类号： H01L33/44 , H01L25/167 , H01L33/0093 , H01L2933/0025
摘要： A light-emitting device includes a light-emitting device core including a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and an element active layer disposed between the first semiconductor layer and the second semiconductor layer; a first insulating layer disposed on the side surface of the light-emitting device core to surround the side surface of the light-emitting device core, and having first fixed charges; and a second insulating layer surrounding the outer side surface of the first insulating layer, and including a material having second fixed charges different from the first fixed charges.
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公开(公告)号：US20230352640A1
公开(公告)日：2023-11-02
申请号：US18022402
申请日：2021-08-03
发明人： Chul Jong YOO , Dong Eon LEE , Myeong Hee KIM , Hoo Keun PARK , Byung Ju LEE , So Young LEE , Seung Geun LEE , Seung A LEE , Jong Won LEE , Ji Hyun HAM
CPC分类号： H01L33/60 , H01L25/167
摘要： A includes a substrate including a plurality of pixels, a plurality of transistors disposed on the substrate, a passivation layer overlapping the plurality of transistors, a first electrode and a second electrode disposed on the passivation layer and spaced apart from each other, an insulating layer disposed on the first electrode and the second electrode, a plurality of light emitting elements disposed between the first electrode and the second electrode on the insulating layer and electrically connected to the first electrode and the second electrode, and an insulating reflective layer disposed between the passivation layer and the plurality of light emitting elements.
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7.发明申请公开(公告)号：US20220140191A1
公开(公告)日：2022-05-05
申请号：US17365461
申请日：2021-07-01
发明人： Young Chul SIM , Hyung Rae CHA , Dong Uk KIM , Sung Ae JANG , Ji Hyun HAM
摘要： A light emitting element includes a first semiconductor layer including a first type of semiconductor, the first semiconductor layer including a 1-1-th semiconductor layer and a 1-2-th semiconductor layer, which are arranged in a length direction of the light emitting element; a second semiconductor layer including a second type of semiconductor different from the first type; an active layer disposed between the 1-2-th semiconductor layer and the second semiconductor layer; and an intermediate layer disposed between the 1-1-th semiconductor layer and the 1-2-th semiconductor layer and having a porous structure.
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