公开(公告)号：US20140346520A1

公开(公告)日：2014-11-27

申请号：US14227654

申请日：2014-03-27

Applicant: Samsung Display Co., Ltd.

Inventor： Jaewon KIM ,  Boyeong KIM ,  Soo-Hyun KIM ,  Kyung-ho PARK ,  HyungJun PARK ,  Dong-Hyun YOO ,  Ki Yeup LEE ,  Seongyoung LEE

IPC: H01L27/12

CPC classification number: H01L27/1255 ,  G09G3/3266 ,  G09G3/3677 ,  G09G2310/0267 ,  G09G2310/0286 ,  G09G2330/04 ,  G09G2330/06

Abstract: A driver includes a dummy stage and one or more additional stages coupled to the dummy stage. The dummy stage includes a first transistor coupled between an input terminal and an output terminal. The first transistor includes two electrodes forming at least a first capacitor to store at least a portion of static electricity received through the input terminal. The one or more additional stages output gate signals, which may be received, for example, by a display device.

Abstract translation: 驱动器包括虚拟级和耦合到虚拟级的一个或多个附加级。 虚设级包括耦合在输入端和输出端之间的第一晶体管。 第一晶体管包括形成至少第一电容器的两个电极，以存储通过输入端子接收的至少一部分静电。 一个或多个附加级输出门信号，其可以例如由显示设备接收。

公开(公告)号：US20220231079A1

公开(公告)日：2022-07-21

申请号：US17483060

申请日：2021-09-23

Applicant: Samsung Display Co., LTD.

Inventor： Ki Yeup LEE ,  Sang Yong NO ,  Ji Yeon CHOI ,  Tae Ho KANG ,  Hwa Rang LEE

IPC: H01L27/15 ,  H01L23/60 ,  H01L33/48 ,  H01L33/50

Abstract: A display device includes a first substrate including a display area comprising pixels, and a non-display area surrounding the display area, a thin film transistor layer disposed on the first substrate and comprising a thin film transistor, a second substrate disposed on the thin film transistor layer and facing the first substrate, a sealing part disposed between the first substrate and the second substrate in the non-display area, and bonding the first and second substrates, a metal line disposed in the non-display area on the thin film transistor layer and overlapping the sealing part, and an antistatic member comprising a support supported by the metal line, a first receiver protruding from a top portion of the support to an exterior of the sealing part, and a second receiver protruding from a bottom portion of the support toward the exterior of the sealing part and facing the first receiver.

公开(公告)号：US20230363225A1

公开(公告)日：2023-11-09

申请号：US18122842

申请日：2023-03-17

Applicant: Samsung Display Co., LTD.

Inventor： Do Gi LIM ,  SEOK-MIN KANG ,  Ki Yeup LEE ,  An Su LEE

IPC: H10K59/131

CPC classification number: H10K59/1315

Abstract: A display device according to an embodiment includes: a first wiring layer disposed on a substrate; a first insulating layer disposed on the first wiring layer and including an inorganic material; a second insulating layer disposed on the first insulating layer, and including an organic material; and a second wiring layer disposed on the second insulating layer and electrically connected to the first wiring layer through a contact hole of the first insulating layer and the second insulating layer. A thickness of the second insulating layer is greater than a thickness of the first insulating layer. The contact hole includes a first sub-contact hole formed in the first insulating layer and a second sub-contact hole formed in the second insulating layer. At least part of at least one edge of the first sub-contact hole is covered with the second insulating layer.

公开(公告)号：US20220254813A1

公开(公告)日：2022-08-11

申请号：US17454026

申请日：2021-11-08

Applicant: Samsung Display Co., Ltd.

Inventor： Ki Yeup LEE ,  Dong Hyeon KI ,  Dong Hee SHIN ,  Dong Yoon LEE

IPC: H01L27/12 ,  H01L25/16 ,  H01L23/00 ,  H01L27/02

Abstract: A display device includes a first substrate, a first electrode on the first substrate, a second electrode on the first substrate and spaced from the first electrode, a plurality of light-emitting elements each having respective end portions on the first and second electrodes, a first transistor having a first end connected to the first electrode and a second end grounded, and a second transistor having a first end connected to the second electrode and a second end grounded, wherein the first transistor is forward-biased to the first electrode, and the second transistor is reverse-biased to the second electrode.