公开(公告)号：US20230030918A1

公开(公告)日：2023-02-02

申请号：US17590501

申请日：2022-02-01

Applicant: Samsung Display Co., LTD.

Inventor： Sang Shin LEE ,  Min Young KIM ,  Yong Hwan KIM ,  Jung Hyun AHN ,  Seung Jin LEE

IPC: H01L51/50 ,  H01L51/56

Abstract: A display device includes a first pixel, a second pixel, and a third pixel each of which includes a first electrode on a substrate, a first sub-light emitting portion on the first electrode, a first charge generation layer on the first sub-light emitting portion, a second sub-light emitting portion on the first charge generation layer, and a second electrode on the second sub-light emitting portion. The second sub-light emitting portion includes a hole transport layer on the first charge generation layer and an emission layer on the hole transport layer. The hole transport layer of the first pixel is on the first charge generation layer of the first pixel and completely covers the first charge generation layer of the first pixel. A part of an edge of the hole transport layer of the first pixel overlaps the first charge generation layer of the second pixel.

公开(公告)号：US20220028925A1

公开(公告)日：2022-01-27

申请号：US17382864

申请日：2021-07-22

Applicant: Samsung Display Co., LTD.

Inventor： Moon Jung AN ,  Hye Lim KANG ,  Min Young KIM ,  Dong Eon LEE

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/24 ,  H01L33/38 ,  H01L33/44

Abstract: A light-emitting element, a method of fabricating a light-emitting element, and a display device comprising a light-emitting element are provided. The light-emitting element comprises a first semiconductor layer doped with an n-type dopant, a second semiconductor layer doped with a p-type dopant, a light-emitting layer disposed between the first semiconductor layer and second semiconductor layer, an electrode layer disposed on the second semiconductor layer, an insulating structure disposed on the electrode layer and having a maximum diameter smaller than a diameter of the electrode layer and an insulating film that surrounds side surfaces of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer.