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1.发明公开公开(公告)号：US20230411560A1
公开(公告)日：2023-12-21
申请号：US18101711
申请日：2023-01-26
发明人： Hye Lim KANG , Si Sung KIM , Hyung Seok KIM , Dong Eon LEE , Jong Jin LEE
CPC分类号： H01L33/382 , H01L33/62 , H01L2933/0016 , H01L33/20 , H01L33/005
摘要： A light emitting element includes a first semiconductor layer, a light emitting layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the light emitting layer, an electrode layer disposed on the second semiconductor layer, and an insulative film. The insulative film surrounds side surfaces of the first semiconductor layer, the light emitting layer, and the second semiconductor layer, and surrounds a portion of the electrode layer at a first end portion at which the electrode layer is disposed. The electrode layer includes a first surface adjacent to the second semiconductor layer, and a second surface facing the first surface, the second surface having a width greater than a width of the first surface.
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公开(公告)号：US20230027490A1
公开(公告)日：2023-01-26
申请号：US17786260
申请日：2020-12-15
发明人： Hye Lim KANG , Dong Gyun KIM , Hoo Keun PARK , Moon Jung AN , Chul Jong YOO , Dong Eon LEE
摘要： A display device includes a first electrode, a second electrode disposed spaced apart from the first electrode in a first direction, and an element part disposed between the first electrode and the second electrode. The element part includes light-emitting elements that have a shape extending in one direction and are arranged spaced apart from each other in a second direction perpendicular to the first direction; and a binder surrounding each of the light-emitting elements and fixing the light-emitting elements. The one direction in which the light-emitting elements extend is parallel to the first direction.
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公开(公告)号：US20210375984A1
公开(公告)日：2021-12-02
申请号：US17403828
申请日：2021-08-16
发明人： Dong Gyun KIM , Moon Jung AN , Dong Eon LEE , Hye Lim KANG , Hoo Keun PARK , Byung Ju LEE
摘要： A display device includes a substrate; a first electrode and a second electrode arranged to be spaced apart from each other on the substrate; a first insulating layer on the substrate; a light emitting element on the first insulating layer, located between the first electrode and the second electrode, and including a first end portion and a second end portion; a third electrode on the substrate and electrically connected to the first electrode and the first end portion; a fourth electrode on the substrate and electrically connected to the second electrode and the second end portion; a second insulating layer on the substrate and covering the light emitting element, the third electrode, and the fourth electrode; and a light diffusion layer on the second insulating layer and including a light diffusion particle.
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公开(公告)号：US20230006095A1
公开(公告)日：2023-01-05
申请号：US17757218
申请日：2020-12-07
发明人： Hoo Keun PARK , Moon Jung AN , Dong Eon LEE , Chul Jong YOO , Hye Lim KANG , Dong Gyun KIM
摘要： A light-emitting element including: a first semiconductor layer doped with a first type of dopant; a second semiconductor layer doped with a second type of dopant that is different from the first type of dopant; and an active layer between the first semiconductor layer and the second semiconductor layer, wherein a length of the light-emitting element measured in a first direction, which may be a direction in which the first semiconductor layer, the active layer, and the second semiconductor layer may be arranged, may be shorter than the width measured in a second direction that is perpendicular to the first direction.
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公开(公告)号：US20220376144A1
公开(公告)日：2022-11-24
申请号：US17636218
申请日：2020-02-27
发明人： Moon Jung AN , Sung Chan JO , Hoo Keun PARK , Chul Jong YOO , Hye Lim KANG , Dong Gyun KIM , Dong Eon LEE , Hyun Min CHO
摘要： A light emitting element includes: a first semiconductor layer doped with a first polarity; a second semiconductor layer doped with a second polarity different from the first polarity; an active layer between the first semiconductor layer and the second semiconductor layer in a first direction; and an insulating film surrounding an outer surface of at least the active layer and extending in the first direction. A thickness of a first portion of the insulating film surrounding the active layer is in a range of 10% to 16% of a diameter of the active layer.
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公开(公告)号：US20220367756A1
公开(公告)日：2022-11-17
申请号：US17638169
申请日：2020-02-27
发明人： Dong Eon LEE , Hoo Keun PARK , Moon Jung AN , Chul Jong YOO , Hye Lim KANG , Dong Gyun KIM
摘要： A light emitting element includes: a first semiconductor layer doped with a first polarity; a second semiconductor layer doped with a second polarity different from the first polarity; an active layer between the first semiconductor layer and the second semiconductor layer in a first direction; a first outer film around an outer surface of at least the active layer and extending in the first direction; and a second outer film around an outer surface of a portion of the first semiconductor layer on which the first outer film is not present.
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公开(公告)号：US20220238756A1
公开(公告)日：2022-07-28
申请号：US17476927
申请日：2021-09-16
发明人： Hye Lim KANG , Moon Jung AN , Je Won YOO , Dong Eon LEE
摘要： A light-emitting element includes a light-emitting element core extending in a direction and including a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and a device active layer disposed between the first semiconductor layer and the second semiconductor layer, a device insulating film surrounding a lateral surface of the light-emitting element core, and a reflective film disposed on an outer lateral surface of the device insulating film and surrounding at least a lateral surface of the device active layer.
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8.发明公开公开(公告)号：US20240128409A1
公开(公告)日：2024-04-18
申请号：US18316513
申请日：2023-05-12
发明人： Hyung Seok KIM , Hye Lim KANG , Si Sung KIM , Jong Jin LEE , Dong Eon LEE
IPC分类号： H01L33/38 , H01L25/075 , H01L33/62
CPC分类号： H01L33/382 , H01L25/0753 , H01L33/62 , H01L2933/0016
摘要： A light emitting element may include a first semiconductor layer, an emission layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the emission layer, an insulating film, and an electrode layer. The insulating film may enclose a side surface of the first semiconductor layer, a side surface of the emission layer, and a side surface of the second semiconductor layer. The electrode layer may be disposed on the second semiconductor layer and the insulating film. The insulating film may not enclose the electrode layer.
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公开(公告)号：US20220069162A1
公开(公告)日：2022-03-03
申请号：US17423455
申请日：2019-11-25
发明人： Young Rag DO , Hye Lim KANG , Hoo Keun PARK
摘要： A method for manufacturing a light-emitting element, and a display device including a light-emitting element are provided. A method for manufacturing a light-emitting element includes: preparing a base substrate and at least one semiconductor rod formed on the base substrate; a first separating including forming a first element structure, which includes a semiconductor rod of the at least one semiconductor rod and a first support formed around the outer surface of the semiconductor rod, and separating the first element structure from the base substrate; removing at least a part of the first support so as to partially expose the semiconductor rod, and forming a second element structure which includes the exposed semiconductor rod and a second support around the outer surface of the first support; and a second separating including separating the semiconductor rod from the second element structure.
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10.发明申请公开(公告)号：US20220028925A1
公开(公告)日：2022-01-27
申请号：US17382864
申请日：2021-07-22
发明人： Moon Jung AN , Hye Lim KANG , Min Young KIM , Dong Eon LEE
摘要： A light-emitting element, a method of fabricating a light-emitting element, and a display device comprising a light-emitting element are provided. The light-emitting element comprises a first semiconductor layer doped with an n-type dopant, a second semiconductor layer doped with a p-type dopant, a light-emitting layer disposed between the first semiconductor layer and second semiconductor layer, an electrode layer disposed on the second semiconductor layer, an insulating structure disposed on the electrode layer and having a maximum diameter smaller than a diameter of the electrode layer and an insulating film that surrounds side surfaces of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer.
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