公开(公告)号：US11211407B2

公开(公告)日：2021-12-28

申请号：US16986933

申请日：2020-08-06

Applicant: Samsung Display Co., LTD.

Inventor： Tetsuhiro Tanaka ,  Yeong-Gyu Kim ,  Ki Seong Seo ,  Seung Hyun Lee ,  Chang Ho Yi

IPC: H01L27/12 ,  G09G3/32 ,  H01L27/32

Abstract: A display device includes a polycrystalline semiconductor including a channel, a first electrode, and a second electrode of a driving transistor, a first gate insulating layer, a gate electrode of a driving transistor, a first electrode of a boost capacitor, a second gate insulating layer, a first interlayer insulating layer, an oxide semiconductor including a channel, a first electrode, and a second electrode of a second transistor, a channel, a first electrode, and a second electrode of a third transistor, and a second electrode of a boost capacitor, a third gate insulating layer disposed on the oxide semiconductor, a gate electrode of the second transistor overlapping the channel of the second transistor, a gate electrode of the third transistor overlapping the channel of the third transistor, and a second interlayer insulating layer disposed on the gate electrode of the second transistor and the gate electrode of the third transistor.

公开(公告)号：US11856826B2

公开(公告)日：2023-12-26

申请号：US17336365

申请日：2021-06-02

Applicant: Samsung Display Co., Ltd.

Inventor： Tetsuhiro Tanaka ,  Yeong-Gyu Kim ,  Kiseong Seo ,  Jonghyun Yun ,  Seunghyun Lee

IPC: H10K59/121 ,  H10K59/131 ,  H01L27/12

CPC classification number: H10K59/131 ,  H10K59/1213 ,  H10K59/1216 ,  H01L27/1214

Abstract: A display device may include a first active layer disposed on a substrate, a scan line disposed on the first active layer, a lower gate signal line disposed on the scan line, an oxide semiconductor pattern disposed on the lower gate signal line, and including a channel part that overlaps the lower gate signal line and a low-resistance part formed on a side portion of the channel part, a metal pattern disposed on at least one surface of the low-resistance part, and an upper gate signal line disposed on the oxide semiconductor pattern to overlap the channel part.

公开(公告)号：US11610957B2

公开(公告)日：2023-03-21

申请号：US17160562

申请日：2021-01-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Tetsuhiro Tanaka ,  Yeong-Gyu Kim ,  Tae Sik Kim ,  Hee Yeon Kim ,  Ki Seong Seo ,  Seung Hyun Lee ,  Kyeong Woo Jang ,  Sug Woo Jung

IPC: H01L27/00 ,  H01L29/00 ,  H01L27/32 ,  H01L29/786

Abstract: A display device includes a first thin film transistor disposed on a substrate. A first insulating interlayer covers the first thin film transistor. An active pattern is disposed on the first insulating interlayer. The active pattern includes indium-gallium-zinc oxide (IGZO) having a thickness in a range of about 150 Å to about 400 Å. A gate insulation layer covers the active pattern. A gate pattern is disposed on the gate insulation layer. A second insulating interlayer covers the gate pattern.