公开(公告)号：US11631727B2

公开(公告)日：2023-04-18

申请号：US17134595

申请日：2020-12-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Keunwoo Kim ,  Taewook Kang ,  Doona Kim ,  Bummo Sung ,  Dokyeong Lee ,  Jaehwan Chu

IPC: H01L29/08 ,  H01L27/32 ,  H01L29/786

Abstract: A thin-film transistor substrate includes a semiconductor layer disposed on a substrate, a gate insulating layer disposed on the semiconductor layer, a first electrode that at least partly overlaps the semiconductor layer, wherein the gate insulating layer is disposed between the first electrode and the semiconductor layer, a plurality of thin-film layers disposed on the first electrode, and a second electrode that at least partly overlaps the first electrode, wherein the plurality of thin-film layers are disposed between the second electrode and the first electrode, wherein at least one of the plurality of thin-film layers includes amorphous silicon.

公开(公告)号：US20210288123A1

公开(公告)日：2021-09-16

申请号：US17134595

申请日：2020-12-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Keunwoo Kim ,  Taewook Kang ,  Doona Kim ,  Bummo Sung ,  Dokyeong Lee ,  Jaehwan Chu

IPC: H01L27/32 ,  H01L29/786

Abstract: A thin-film transistor substrate includes a semiconductor layer disposed on a substrate, a gate insulating layer disposed on the semiconductor layer, a first electrode that at least partly overlaps the semiconductor layer, wherein the gate insulating layer is disposed between the first electrode and the semiconductor layer, a plurality of thin-film layers disposed on the first electrode, and a second electrode that at least partly overlaps the first electrode, wherein the plurality of thin-film layers are disposed between the second electrode and the first electrode, wherein at least one of the plurality of thin-film layers includes amorphous silicon.

公开(公告)号：US20250160122A1

公开(公告)日：2025-05-15

申请号：US18788505

申请日：2024-07-30

Applicant: Samsung Display Co., Ltd.

Inventor： Keunwoo Kim ,  Sangsub Kim ,  Bummo Sung ,  Kyoungseok Son ,  Hyuneok Shin ,  Sunhee Lee ,  Sanggun Choi ,  Taehyun Hong

IPC: H10K59/121 ,  H10K59/12

Abstract: Provided is a display apparatus including a substrate, a first semiconductor layer disposed on the substrate and including a first active portion, a second active portion, and a first doped portion, a first conductive layer including a first conductive pattern overlapping the first active portion, a second conductive layer including a second conductive pattern and a third conductive pattern, the second conductive pattern overlapping the first conductive pattern, and the third conductive pattern connected to the first doped portion through a first contact hole, a second semiconductor layer disposed on the second conductive layer, and including an upper-first active portion and a second doped portion, a third conductive layer including a first conductive line overlapping the upper-first active portion, and a fourth conductive layer including a fourth conductive pattern electrically connecting the third conductive pattern to the second doped portion.

公开(公告)号：US11974474B2

公开(公告)日：2024-04-30

申请号：US17158362

申请日：2021-01-26

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jaehwan Chu ,  Keunwoo Kim ,  Taewook Kang ,  Doona Kim ,  Sangsub Kim ,  Bummo Sung ,  Dokyeong Lee ,  Yongsu Lee

IPC: H01L27/32 ,  G09G3/3233 ,  H10K59/131

CPC classification number: H10K59/131 ,  G09G3/3233

Abstract: An organic light-emitting display apparatus includes an organic light-emitting diode, a driving transistor configured to control an amount of electric current flowing to the organic light-emitting diode from a power line, a compensation transistor configured to diode-connect the driving transistor in response to a voltage applied to first and second compensation gate electrodes of the compensation transistor, and a gate insulating layer between the compensation gate electrodes and a compensation active region of a compensation transistor. A layer structure of the gate insulating layer between the first compensation gate electrode and the compensation active region is different from a layer structure of the gate insulating layer between the second compensation gate electrode and the compensation active region.