公开(公告)号：US20190115440A1

公开(公告)日：2019-04-18

申请号：US16157155

申请日：2018-10-11

Applicant: Samsung Display Co., Ltd.

Inventor： Dongsung Lee ,  Cheolho Park ,  Jongoh Seo ,  Byungsoo So ,  Dongmin Lee

IPC: H01L29/45 ,  H01L51/10 ,  H01L27/12 ,  H01L29/40 ,  H01L29/49

Abstract: A display device includes: a thin-film transistor on a substrate, the thin-film transistor including on the substrate: an active layer; a gate electrode overlapping the active layer; a source electrode and a drain electrode electrically connected to the active layer and including a first metal material; and a first capping layer which covers each of the source electrode and the drain electrode, the first capping layer having a Young's modulus greater than that of the first metal material.

公开(公告)号：US20210091201A1

公开(公告)日：2021-03-25

申请号：US17113777

申请日：2020-12-07

Applicant: Samsung Display Co., Ltd.

Inventor： Dongsung Lee ,  Cheolho Park ,  Jongoh Seo ,  Byungsoo So ,  Dongmin Lee

IPC: H01L29/45 ,  H01L51/10 ,  H01L29/40 ,  H01L29/49 ,  H01L27/12

Abstract: A display device includes: a thin-film transistor on a substrate, the thin-film transistor including on the substrate: an active layer; a gate electrode overlapping the active layer; a source electrode and a drain electrode electrically connected to the active layer and including a first metal material; and a first capping layer which covers each of the source electrode and the drain electrode, the first capping layer having a Young's modulus greater than that of the first metal material.

公开(公告)号：US10892343B2

公开(公告)日：2021-01-12

申请号：US16157155

申请日：2018-10-11

Applicant: Samsung Display Co., Ltd.

Inventor： Dongsung Lee ,  Cheolho Park ,  Jongoh Seo ,  Byungsoo So ,  Dongmin Lee

IPC: H01L29/45 ,  H01L29/40 ,  H01L29/49 ,  H01L51/10 ,  H01L27/12

Abstract: A display device includes: a thin-film transistor on a substrate, the thin-film transistor including on the substrate: an active layer; a gate electrode overlapping the active layer; a source electrode and a drain electrode electrically connected to the active layer and including a first metal material; and a first capping layer which covers each of the source electrode and the drain electrode, the first capping layer having a Young's modulus greater than that of the first metal material.

公开(公告)号：US12002868B2

公开(公告)日：2024-06-04

申请号：US17113777

申请日：2020-12-07

Applicant: Samsung Display Co., Ltd.

Inventor： Dongsung Lee ,  Cheolho Park ,  Jongoh Seo ,  Byungsoo So ,  Dongmin Lee

IPC: H01L29/45 ,  H01L27/12 ,  H01L29/40 ,  H01L29/49 ,  H10K10/82 ,  H10K10/84 ,  H10K71/00 ,  H10K71/20

CPC classification number: H01L29/458 ,  H01L27/124 ,  H01L29/401 ,  H01L29/4908 ,  H10K10/82 ,  H10K10/84 ,  H10K71/236 ,  H10K71/621 ,  Y10S438/937

Abstract: A display device includes: a thin-film transistor on a substrate, the thin-film transistor including on the substrate: an active layer; a gate electrode overlapping the active layer; a source electrode and a drain electrode electrically connected to the active layer and including a first metal material; and a first capping layer which covers each of the source electrode and the drain electrode, the first capping layer having a Young's modulus greater than that of the first metal material.