公开(公告)号：US20240363675A1

公开(公告)日：2024-10-31

申请号：US18767003

申请日：2024-07-09

申请人： SEOUL VIOSYS CO., LTD.

发明人： Jong Hyeon CHAE ,  Seong Gyu JANG ,  Ho Joon LEE ,  Chang Yeon KIM ,  Chung Hoon LEE

IPC分类号： H01L27/15 ,  H01L25/065 ,  H01L25/075 ,  H01L25/11 ,  H01L25/13 ,  H01L33/00 ,  H01L33/10 ,  H01L33/38 ,  H01L33/40 ,  H01L33/42 ,  H01L33/50 ,  H01L33/62 ,  H10K10/84 ,  H10K50/813 ,  H10K50/818 ,  H10K50/822 ,  H10K50/828 ,  H10K59/32 ,  H10K59/35

CPC分类号： H01L27/156 ,  H01L25/0756 ,  H01L25/13 ,  H01L33/0093 ,  H01L33/10 ,  H01L33/405 ,  H01L33/42 ,  H01L33/507 ,  H01L33/62 ,  H01L25/0655 ,  H01L25/0753 ,  H01L25/115 ,  H01L33/38 ,  H01L33/382 ,  H10K10/84 ,  H10K50/813 ,  H10K50/818 ,  H10K50/822 ,  H10K50/828 ,  H10K59/32 ,  H10K59/35

摘要： A light emitting diode (LED) stack for a display including a first LED stack including a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer, a second LED stack disposed on the first LED stack, a third LED stack disposed on the second LED stack, an intermediate bonding layer disposed between the first LED stack and the second LED stack to bond the second LED stack to the first LED stack, an upper bonding layer disposed between the second LED stack and the third LED stack to couple the third LED stack to the second LED stack, and a first hydrophilic material layer disposed between the first LED stack and the upper bonding layer.

公开(公告)号：US12133397B2

公开(公告)日：2024-10-29

申请号：US17753409

申请日：2020-06-18

申请人： THE UNIVERSITY OF TOKYO

发明人： Junichi Takeya ,  Shunichiro Watanabe ,  Tatsuyuki Makita

IPC分类号： H01L23/00 ,  H10K10/46 ,  H10K10/84 ,  H10K10/88 ,  H10K71/60 ,  H10K71/80 ,  H10K85/10 ,  H10K85/60

CPC分类号： H10K10/84 ,  H10K10/471 ,  H10K10/88 ,  H10K71/60 ,  H10K71/611 ,  H10K71/80 ,  H10K85/141 ,  H10K85/6576 ,  H10K10/464 ,  H10K10/466

摘要： The present disclosure provides fine electrodes in which an organic semiconductor does not easily change with time, and which can be applied to manufacturing of a practical integrated circuit of an organic semiconductor device. The present disclosure relates to electrodes for source/drain of an organic semiconductor device, comprising 10 or more sets of electrodes, wherein a channel length between the electrodes in each set is 200 μm or less, and the electrodes in each set have a surface with a surface roughness Rq of 2 nm or less.

公开(公告)号：US20230276640A1

公开(公告)日：2023-08-31

申请号：US18311730

申请日：2023-05-03

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Marcus Johannes Henricus VAN DAL ,  Timothy VASEN ,  Gerben DOORNBOS

IPC分类号： H10K10/46 ,  H10K71/60 ,  H10K19/10 ,  H10K10/84

CPC分类号： H10K10/481 ,  H10K10/486 ,  H10K71/60 ,  H10K19/10 ,  H10K10/84 ,  H10K85/221

摘要： In a method of forming a gate-all-around field effect transistor, a gate structure is formed surrounding a channel portion of a carbon nanotube. An inner spacer is formed surrounding a source/drain extension portion of the carbon nanotube, which extends outward from the channel portion of the carbon nanotube. The inner spacer includes two dielectric layers that form interface dipole. The interface dipole introduces doping to the source/drain extension portion of the carbon nanotube.

公开(公告)号：US11664410B2

公开(公告)日：2023-05-30

申请号：US17518602

申请日：2021-11-04

申请人： SEOUL VIOSYS CO., LTD.

发明人： Jong Hyeon Chae ,  Seong Gyu Jang ,  Ho Joon Lee ,  Chang Yeon Kim ,  Chung Hoon Lee

IPC分类号： H01L27/15 ,  H01L27/12 ,  H01L33/10 ,  H01L33/40 ,  H01L33/62 ,  H01L25/075 ,  H01L33/00 ,  H01L25/13 ,  H01L33/42 ,  H01L33/50 ,  H01L25/065 ,  H01L25/11 ,  H01L33/38

CPC分类号： H01L27/156 ,  H01L25/0756 ,  H01L25/13 ,  H01L33/0093 ,  H01L33/10 ,  H01L33/405 ,  H01L33/42 ,  H01L33/507 ,  H01L33/62 ,  H01L25/0655 ,  H01L25/0753 ,  H01L25/115 ,  H01L33/38 ,  H01L33/382 ,  H10K10/84 ,  H10K50/813 ,  H10K50/818 ,  H10K50/822 ,  H10K50/828 ,  H10K59/32 ,  H10K59/35

摘要： A light emitting diode (LED) stack for a display including a first LED stack including a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer, a second LED stack disposed on the first LED stack, a third LED stack disposed on the second LED stack, an intermediate bonding layer disposed between the first LED stack and the second LED stack to bond the second LED stack to the first LED stack, an upper bonding layer disposed between the second LED stack and the third LED stack to couple the third LED stack to the second LED stack, and a first hydrophilic material layer disposed between the first LED stack and the upper bonding layer.

公开(公告)号：US20240292635A1

公开(公告)日：2024-08-29

申请号：US18427394

申请日：2024-01-30

申请人： The Board of Trustees of the Leland Stanford Junior University

发明人： Zhenan Bao ,  Donglai Zhong ,  Yuanwen Jiang ,  Can Wu

IPC分类号： H10K10/84 ,  H10K10/46 ,  H10K85/20

CPC分类号： H10K10/84 ,  H10K10/466 ,  H10K10/484 ,  H10K85/221

摘要： In certain examples, a semiconductor includes a transistor having a channel including semiconducting CNTs (carbon nanotubes) material, and having source and drain electrodes separated from each other by a distance that spans at least a portion of the channel and that is in a range from 100 nm to 50,000 nm. With current passing between the source and drain electrodes and through the channel, an interface material is used (sandwiched between a first surface region of the channel and the source electrode and between a second surface region of the channel and the drain electrode) to reduce contact resistance and, with the channel, facilitate a high charge-carrier mobility.

公开(公告)号：US20230360913A1

公开(公告)日：2023-11-09

申请号：US18356636

申请日：2023-07-21

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Tzu-Ang Chao ,  Gregory Michael Pitner ,  Tse-An Chen ,  Lain-Jong Li ,  Yu Chao Lin

IPC分类号： H01L21/02 ,  H01L29/06 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L29/786 ,  H10K10/84 ,  H10K10/46 ,  H10K71/00 ,  H10K71/12 ,  H10K85/20

CPC分类号： H01L21/02606 ,  H01L29/0669 ,  H01L29/401 ,  H01L29/42356 ,  H01L29/42392 ,  H01L29/66045 ,  H01L29/78 ,  H01L29/7845 ,  H01L29/786 ,  H10K10/84 ,  H10K10/472 ,  H10K10/481 ,  H10K10/484 ,  H10K10/491 ,  H10K71/00 ,  H10K71/12 ,  H10K85/221

摘要： A semiconductor device and method of manufacturing using carbon nanotubes are provided. In embodiments a stack of nanotubes are formed and then a non-destructive removal process is utilized to reduce the thickness of the stack of nanotubes. A device such as a transistor may then be formed from the reduced stack of nanotubes.

公开(公告)号：US20230354645A1

公开(公告)日：2023-11-02

申请号：US18218498

申请日：2023-07-05

申请人： LG Display Co., Ltd.

发明人： Tae-Won LEE ,  Jong-Chan PARK ,  Hyun-Chul UM

IPC分类号： H10K59/121 ,  H01L27/12 ,  H10K10/84 ,  H10K50/84

CPC分类号： H10K59/1213 ,  H01L27/1214 ,  H10K10/84 ,  H10K50/84

摘要： Disclosed is a display device. The display device includes a substrate having an active area and a non-active area, a thin film transistor arranged on the active area of the substrate, at least two planarization layers arranged on the thin film transistor, signal links arranged on the non-active area of the substrate, and an outer cover layer spaced apart from the at least two planarization layers and configured to overlap upper and side surfaces of the signal links, thus preventing or reducing damage to the signal links.

公开(公告)号：US11749528B2

公开(公告)日：2023-09-05

申请号：US17736505

申请日：2022-05-04

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Tzu-Ang Chao ,  Gregory Michael Pitner ,  Tse-An Chen ,  Lain-Jong Li ,  Yu Chao Lin

IPC分类号： H01L21/02 ,  H01L29/06 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L29/786 ,  H10K10/84 ,  H10K10/46 ,  H10K71/00 ,  H10K71/12 ,  H10K85/20

CPC分类号： H01L21/02606 ,  H01L29/0669 ,  H01L29/401 ,  H01L29/42356 ,  H01L29/42392 ,  H01L29/66045 ,  H01L29/78 ,  H01L29/786 ,  H01L29/7845 ,  H10K10/472 ,  H10K10/481 ,  H10K10/484 ,  H10K10/491 ,  H10K10/84 ,  H10K71/00 ,  H10K71/12 ,  H10K85/221

摘要： A semiconductor device and method of manufacturing using carbon nanotubes are provided. In embodiments a stack of nanotubes are formed and then a non-destructive removal process is utilized to reduce the thickness of the stack of nanotubes. A device such as a transistor may then be formed from the reduced stack of nanotubes.

公开(公告)号：US20230269995A1

公开(公告)日：2023-08-24

申请号：US18004135

申请日：2021-07-07

申请人： THE UNIVERSITY OF HONG KONG

发明人： Kwok Leung CHAN ,  Boyu PENG

IPC分类号： H10K71/15 ,  H10K71/60 ,  H10K10/46

CPC分类号： H10K71/15 ,  H10K71/60 ,  H10K10/484 ,  H10K10/84

摘要： A method for manufacturing a semiconductor device having an organic semiconductor material is provided. The method includes performing a large-area solution shearing step to form a monolayer (1L) or bi-layer (2L) C10-DNTT crystals with low shearing speed and forming Au electrodes by thermal evaporation on a wafer. The large-area solution shearing step is performed at a temperature in a range between about 60° C. and about 65° C. and with a shearing speed in a range between about 2 μm/sand about 3 μm/s. The 1L or 2L crystals have single-crystalline domains extending over several millimeters. An organic field-effect transistor (OFET) comprising an active layer that comprises a monolayer (1L) or bi-layer (2L) C10-DNTT crystals formed according to the method is also provided.

公开(公告)号：US11737317B2

公开(公告)日：2023-08-22

申请号：US17220523

申请日：2021-04-01

申请人： LG Display Co., Ltd.

发明人： Tae-Won Lee ,  Jong-Chan Park ,  Hyun-Chul Um

IPC分类号： H01L27/32 ,  H10K59/121 ,  H01L27/12 ,  H10K10/84 ,  H10K50/84

CPC分类号： H10K59/1213 ,  H01L27/1214 ,  H10K10/84 ,  H10K50/84

摘要： Disclosed is a display device. The display device includes a substrate having an active area and a non-active area, a thin film transistor arranged on the active area of the substrate, at least two planarization layers arranged on the thin film transistor, signal links arranged on the non-active area of the substrate, and an outer cover layer spaced apart from the at least two planarization layers and configured to overlap upper and side surfaces of the signal links, thus preventing or reducing damage to the signal links.