Abstract:
A light emitting element includes a first surface corresponding to an end of the light emitting element, a second surface corresponding to another end of the light emitting element, a first semiconductor layer adjacent to the first surface, the first semiconductor layer including a first type of semiconductor, a second semiconductor layer adjacent to the second surface, the second semiconductor layer including a second type of semiconductor different from the first type of semiconductor, and an active layer disposed between the first semiconductor layer and the second semiconductor layer. An area of the first surface is larger than an area of the second surface, and a distance between the first surface and the second surface is shorter than a length defined by the first surface.
Abstract:
A display device includes a substrate, a first pixel electrode disposed on the substrate, and including a first region and a second region electrically connected to each other without overlapping each other, a pixel defining layer disposed on the substrate on which the first pixel electrode is disposed, the pixel defining layer defining a first opening penetrating the pixel defining layer in a thickness direction and exposing the first region of the first pixel electrode, and a second opening penetrating the pixel defining layer in the thickness direction, exposing the second region of the first pixel electrode and separated from the first opening, and a light emitting layer disposed in the first opening exposing the first region of the first pixel electrode and the second opening exposing the second region of the first pixel electrode.
Abstract:
A display device includes an auxiliary electrode disposed on a substrate, a bank layer disposed on the auxiliary electrode, a conductive layer disposed on the auxiliary electrode, the conductive layer including a base portion and protrusions protruded from the base portion, an organic layer disposed on the conductive layer, and a cathode electrode disposed on the organic layer, the cathode electrode being in contact with the protrusions.
Abstract:
A light emitting diode includes: a first semiconductor layer; an active layer located on one surface of the first semiconductor layer; a second semiconductor layer located on one surface of the active layer; an electrode layer located on one surface of the second semiconductor layer; and a bonding electrode layer located on the other surface of the first semiconductor layer.
Abstract:
A display device includes a substrate, a first pixel electrode disposed on the substrate, and including a first region and a second region electrically connected to each other without overlapping each other, a pixel defining layer disposed on the substrate on which the first pixel electrode is disposed, the pixel defining layer defining a first opening penetrating the pixel defining layer in a thickness direction and exposing the first region of the first pixel electrode, and a second opening penetrating the pixel defining layer in the thickness direction, exposing the second region of the first pixel electrode and separated from the first opening, and a light emitting layer disposed in the first opening exposing the first region of the first pixel electrode and the second opening exposing the second region of the first pixel electrode.
Abstract:
An organic light-emitting device including an anode electrode, a hole injection layer on the anode electrode, a hole transport layer on the hole injection layer, an emissive layer on the hole transport layer, and a cathode electrode on the emissive layer. A material of the hole injection layer includes a nitrogen-containing compound having a quinoid structure and a nitrogen-containing compound having a benzenoid structure. A ratio of a peak intensity IB to a peak intensity IA (IB/IA) in a Fourier transform infrared spectroscopy (FTIR) spectrum of the material of the hole injection layer ranges from 1.5 to 2.5, the peak intensity IA and the peak intensity IB being further defined.
Abstract:
A method of manufacturing a light-emitting display device, the method including forming a first electrode on a substrate, the substrate including a plurality of pixel regions divided by a non-pixel region, in each of the pixel regions; forming a pixel defining layer, the pixel defining layer having a plurality of pixel openings, each of the pixel openings exposing the first electrode, on the substrate; forming a hole injection layer on the first electrode; forming a lyophilic layer on the hole injection layer to completely overlap the hole injection layer; forming a hole transport layer on the lyophilic layer; forming a light-emitting layer on the hole transport layer; and forming a second electrode on the light-emitting layer.
Abstract:
An organic light-emitting device including an anode electrode, a hole injection layer on the anode electrode, a hole transport layer on the hole injection layer, an emissive layer on the hole transport layer, and a cathode electrode on the emissive layer. A material of the hole injection layer includes a nitrogen-containing compound having a quinoid structure and a nitrogen-containing compound having a benzenoid structure. A ratio of a peak intensity IB to a peak intensity IA (IB/IA) in a Fourier transform infrared spectroscopy (FTIR) spectrum of the material of the hole injection layer ranges from 1.5 to 2.5, the peak intensity IA and the peak intensity IB being further defined.
Abstract:
A method of manufacturing a light-emitting display device, the method including forming a first electrode on a substrate, the substrate including a plurality of pixel regions divided by a non-pixel region, in each of the pixel regions; forming a pixel defining layer, the pixel defining layer having a plurality of pixel openings, each of the pixel openings exposing the first electrode, on the substrate; forming a hole injection layer on the first electrode; forming a lyophilic layer on the hole injection layer to completely overlap the hole injection layer; forming a hole transport layer on the lyophilic layer; forming a light-emitting layer on the hole transport layer; and forming a second electrode on the light-emitting layer.