METHOD FOR MAKING A PEROVSKITE LAYER AT HIGH SPEED

    公开(公告)号:US20240065089A1

    公开(公告)日:2024-02-22

    申请号:US17891577

    申请日:2022-08-19

    IPC分类号: H01L51/00 H01L51/50

    摘要: A method for making a perovskite layer includes providing a substrate; providing a perovskite solution comprising first and second polar, protic solvents each having a boiling point less than 135 degrees Celsius, an inorganic perovskite precursor, and an organic perovskite precursor, wherein the first solvent is an alcohol-based glycol ether capable of dissolving the inorganic Perovskite precursor material, the second solvent is an aliphatic alcohol, and the perovskite solution has a total initial amount of solvent greater than 30 percent by weight and a total solids concentration that is between 30 percent and 70 percent by weight of the Perovskite solution's saturation concentration: depositing the perovskite solution at a temperature of from 20 to 40 degrees Celsius on the substrate at a first location; removing a first portion of the initial amount of solvent from the deposited perovskite solution with a first drying step having a first drying step dwell time at a second location wherein the temperature of the first drying step is maintained between 20 and 40 degrees Celsius and the first drying step increases the total solids concentration of the perovskite solution to at least 75 percent of its saturation concentration; and removing a second portion of the initial amount of solvent from the deposited perovskite solution with a second drying step having a higher rate of solvent evaporation than the first drying step during a second drying step dwell time at a third location that causes saturation and a conversion reaction in the deposited perovskite solution resulting in perovskite crystal formation or formation of a perovskite intermediate phase, wherein the substrate is moved at a constant speed from the first location to the second location, and from the second location to the third location. A continuous inline method for production of photovoltaic devices at high speed, and a perovskite solution for use in making a uniform Perovskite layer at high speed to enable low cost production of high efficiency Perovskite devices are also described.