公开(公告)号：US12238957B2

公开(公告)日：2025-02-25

申请号：US17329938

申请日：2021-05-25

Applicant: Samsung Display Co., Ltd.

Inventor： Wonho Jang ,  Sun Park ,  Donghyun Won

IPC: H10K50/844 ,  H10K59/122

Abstract: A display apparatus includes a substrate including a display area and a peripheral area, a thin film transistor including a semiconductor layer, a gate electrode, a source electrode, and a drain electrode, a first inorganic insulating layer located on the substrate and under the gate electrode and covering the semiconductor layer, a second inorganic insulating layer located on the first inorganic insulating layer and covering the gate electrode, a third inorganic insulating layer located on the second inorganic insulating layer and including a 1-3th opening in the peripheral area, an organic insulating layer located on the third inorganic insulating layer, covering the source electrode and the drain electrode, and including a second opening overlapping the 1-3th opening in the peripheral area, and a pattern portion located on a layer under the organic insulating layer and overlapping the 1-3th opening and the second opening.

公开(公告)号：US20230320136A1

公开(公告)日：2023-10-05

申请号：US17974470

申请日：2022-10-26

Applicant: Samsung Display Co., Ltd.

Inventor： Seulki Kim ,  Yeeun Kang ,  Shoyeon Kim ,  Seungrae Kim ,  Donghyun Won

IPC: H01L27/32 ,  H01L51/56

CPC classification number: H01L27/3265 ,  H01L27/3258 ,  H01L27/3262 ,  H01L51/56 ,  H01L27/1225

Abstract: A display apparatus and a method of manufacturing the same are provided. The display apparatus includes a thin-film transistor including a semiconductor layer including a source region and a gate electrode overlapping the channel region, a lower electrode disposed under the semiconductor layer, a capacitor electrically connected to the thin-film transistor and including a first capacitor electrode and a second capacitor electrode over the first capacitor electrode, the first capacitor electrode being disposed on a same layer as the lower electrode, and a first insulating layer including a first portion and a second portion, the first portion being between the lower electrode and the semiconductor layer, and the second portion being between the first capacitor electrode and the second capacitor electrode, wherein a thickness of the second portion of the first insulating layer is less than a thickness of the first portion of the first insulating layer.