公开(公告)号：US20230371316A1

公开(公告)日：2023-11-16

申请号：US18103901

申请日：2023-01-31

Applicant: Samsung Display Co., Ltd.

Inventor： Yeeun Kang ,  Kwangsoo Lee ,  Seulki Kim ,  Seungrae Kim ,  Hyun Kim ,  Seungha Choi

IPC: H10K59/123 ,  H10K59/122 ,  H10K59/12 ,  H10K71/00

CPC classification number: H10K59/123 ,  H10K59/122 ,  H10K59/1201 ,  H10K71/00

Abstract: Provided are a display device and a method of manufacturing the display device. The display device includes a substrate, a transistor, a first electrode connected with the transistor, a bank layer covering an edge of the first electrode, including an opening overlapping the first electrode, and a first insulating layer, wherein a top surface of the first electrode includes a first surface portion overlapping the opening of the bank layer, a second surface portion having a vertical distance from the substrate smaller than a vertical distance of the first surface portion from the substrate, a first slope portion between the first surface portion and the second surface portion, the first slope portion inclined downward with respect to the first surface portion, and a second slope portion between the first slope portion and the second surface portion, the second slope portion inclined downward from the edge of the first electrode.

公开(公告)号：US20230320136A1

公开(公告)日：2023-10-05

申请号：US17974470

申请日：2022-10-26

Applicant: Samsung Display Co., Ltd.

Inventor： Seulki Kim ,  Yeeun Kang ,  Shoyeon Kim ,  Seungrae Kim ,  Donghyun Won

IPC: H01L27/32 ,  H01L51/56

CPC classification number: H01L27/3265 ,  H01L27/3258 ,  H01L27/3262 ,  H01L51/56 ,  H01L27/1225

Abstract: A display apparatus and a method of manufacturing the same are provided. The display apparatus includes a thin-film transistor including a semiconductor layer including a source region and a gate electrode overlapping the channel region, a lower electrode disposed under the semiconductor layer, a capacitor electrically connected to the thin-film transistor and including a first capacitor electrode and a second capacitor electrode over the first capacitor electrode, the first capacitor electrode being disposed on a same layer as the lower electrode, and a first insulating layer including a first portion and a second portion, the first portion being between the lower electrode and the semiconductor layer, and the second portion being between the first capacitor electrode and the second capacitor electrode, wherein a thickness of the second portion of the first insulating layer is less than a thickness of the first portion of the first insulating layer.