公开(公告)号：US10473989B2

公开(公告)日：2019-11-12

申请号：US14866242

申请日：2015-09-25

Applicant: Samsung Display Co., Ltd.

Inventor： Huigyeong Yun ,  Daecheol Kim ,  Konhaeng Lee ,  Hwarang Lee ,  Kookhyun Choi

IPC: G02F1/1343

Abstract: A thin film transistor (TFT) and a display device including the same capable of displaying an image having a uniform luminance are provided, the TFT including a gate electrode; a gate insulating layer disposed on the gate electrode; a semiconductor layer disposed on the gate insulating layer; a source electrode and a drain electrode disposed on the semiconductor layer while being spaced apart from one another; and a protective layer disposed on the source electrode and the drain electrode and having a contact hole through which a portion of the drain electrode is exposed, wherein the drain electrode includes a first drain electrode overlapping a portion of the gate electrode, a second drain electrode extending from the first drain electrode and having a portion exposed through the contact hole, and a third drain electrode branched from the first drain electrode to be spaced apart from the second drain electrode.