公开(公告)号：US20250040189A1

公开(公告)日：2025-01-30

申请号：US18411104

申请日：2024-01-12

Applicant: Samsung Display Co., Ltd.

Inventor： Sang Jin PARK ,  DAEGEON KIM ,  JIMIN PARK ,  JINSEOK SEO ,  YONGHAN LEE ,  YOOGANG JEON

IPC: H01L29/786 ,  H01L25/075 ,  H01L25/16 ,  H01L29/66

Abstract: A display device according to an embodiment includes a substrate and a transistor including an oxide semiconductor layer and a gate electrode disposed on the oxide semiconductor layer. The oxide semiconductor layer includes a channel region and a first source region disposed adjacent to the channel region and a second source region disposed adjacent to the first source region, and the drain region include a first drain region disposed adjacent to the channel region and a second drain region disposed adjacent to the first drain region. Each of the first source region and the first drain region includes a first impurity ion, and each of the second source region and the second drain region includes a second impurity ion which are different from the first impurity.