DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20250040189A1

    公开(公告)日:2025-01-30

    申请号:US18411104

    申请日:2024-01-12

    Abstract: A display device according to an embodiment includes a substrate and a transistor including an oxide semiconductor layer and a gate electrode disposed on the oxide semiconductor layer. The oxide semiconductor layer includes a channel region and a first source region disposed adjacent to the channel region and a second source region disposed adjacent to the first source region, and the drain region include a first drain region disposed adjacent to the channel region and a second drain region disposed adjacent to the first drain region. Each of the first source region and the first drain region includes a first impurity ion, and each of the second source region and the second drain region includes a second impurity ion which are different from the first impurity.

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