-
公开(公告)号:US20220140038A1
公开(公告)日:2022-05-05
申请号:US17572913
申请日:2022-01-11
Applicant: Samsung Display Co., Ltd.
Inventor: Joon Woo BAE , So Young KOO , Han Bit KIM , Thanh Tien NGUYEN , Kyoung Won LEE , Yong Su LEE , Jae Seob LEE , Gyoo Chul JO
IPC: H01L27/32 , H01L51/52 , H01L29/786 , H01L27/12
Abstract: An organic light emitting diode display according to an exemplary embodiment includes: a substrate; a first buffer layer on the substrate; a first semiconductor layer on the first buffer layer; a first gate insulating layer on the first semiconductor layer; a first gate electrode and a blocking layer on the first gate insulating layer; a second buffer layer on the first gate electrode; a second semiconductor layer on the second buffer layer; a second gate insulating layer on the second semiconductor layer; and a second gate electrode on the second gate insulating layer.
-
公开(公告)号:US20210049958A1
公开(公告)日:2021-02-18
申请号:US16852848
申请日:2020-04-20
Applicant: Samsung Display Co., Ltd.
Inventor: Keun Woo KIM , Mee Jae KANG , Hye Na KWAK , Han Bit KIM , Thanh Tien NGUYEN , Yong Su LEE , Jae Seob LEE
IPC: G09G3/325 , G09G3/3283 , G09G3/3266
Abstract: A display device includes: a pixel including: a light emitting element connected between a first power source and a second power source; a first transistor connected between the first power source and the light emitting element to control a driving current, and including a first gate electrode connected to a first node and a second gate electrode connected to a bias control line; and a switching transistor connected between a data line and the first node, and including a gate electrode connected to a scan line; and a driving circuit to drive the pixel according to a driving frequency. The driving circuit drives the pixel in a first mode when the driving frequency is in a first range, and sequentially supplies a control signal having a first voltage and a second voltage to the bias control line during a light emission period of the pixel in the first mode.
-
公开(公告)号:US20240130171A1
公开(公告)日:2024-04-18
申请号:US18533509
申请日:2023-12-08
Applicant: Samsung Display Co., Ltd.
Inventor: Seong Min WANG , Young-In HWANG , Yong Ho YANG , Yong Su LEE , Jae Seob LEE , Gyoo Chul JO
IPC: H10K59/123 , G09G3/3233 , G09G3/3258 , H10K50/805 , H10K59/121 , H10K59/126 , H10K59/131
CPC classification number: H10K59/123 , G09G3/3233 , G09G3/3258 , H10K50/805 , H10K59/1213 , H10K59/126 , H10K59/131 , H10K77/111
Abstract: A display may include flexible substrate, a blocking layer on the flexible substrate, a pixel on the flexible substrate and the blocking layer, and a scan line, a data line, a driving voltage line, and an initialization voltage line connected to the pixel. The pixel may include an organic light emitting diode, a switching transistor connected to the scan line, and a driving transistor to apply a current to the organic light emitting diode. The blocking layer is in an area that overlaps the switching transistor on a plane, and between the switching transistor and the flexible substrate, and receives a voltage through a contact hole that exposes the blocking layer.
-
公开(公告)号:US20200342815A1
公开(公告)日:2020-10-29
申请号:US16811514
申请日:2020-03-06
Applicant: Samsung Display Co., LTD.
Inventor: Keun Woo KIM , Mee Jae KANG , Han Bit KIM , Thanh Tien NGUYEN , Yong Su LEE , Jae Seob LEE
IPC: G09G3/3266 , G09G3/3291
Abstract: A display device including pixels is provided. Each of the pixels includes a first transistor having a gate electrode connected to a first node, a first electrode connected to a second node, and a second electrode connected to a third node, a second transistor having a gate electrode connected to a first scan line, a first electrode connected to a data line, and a second electrode connected to the second node, and a third transistor having a first gate electrode connected to the first scan line, a second gate electrode, a first electrode connected to the first node, and a second electrode connected to the third node. The second gate electrode may be in a floating state, and the third transistor may be aged to alleviate a leakage current in order to improve image generation.
-
公开(公告)号:US20240081099A1
公开(公告)日:2024-03-07
申请号:US18505778
申请日:2023-11-09
Applicant: Samsung Display Co., Ltd.
Inventor: Joon Woo BAE , So Young KOO , Han Bit KIM , Thanh Tien NGUYEN , Kyoung Won LEE , Yong Su LEE , Jae Seob LEE , Gyoo Chul JO
IPC: H10K59/121 , H10K50/844 , H10K59/126 , H10K59/131
CPC classification number: H10K59/1213 , H10K50/844 , H10K59/1216 , H10K59/126 , H10K59/131 , H01L29/7869
Abstract: An organic light emitting diode display according to an exemplary embodiment includes: a substrate; a first buffer layer on the substrate; a first semiconductor layer on the first buffer layer; a first gate insulating layer on the first semiconductor layer; a first gate electrode and a blocking layer on the first gate insulating layer; a second buffer layer on the first gate electrode; a second semiconductor layer on the second buffer layer; a second gate insulating layer on the second semiconductor layer; and a second gate electrode on the second gate insulating layer.
-
公开(公告)号:US20230232671A1
公开(公告)日:2023-07-20
申请号:US18122174
申请日:2023-03-16
Applicant: Samsung Display Co., Ltd.
Inventor: Joon Woo BAE , Mee Jae KANG , Thanh Tien NGUYEN , Kyoung Won LEE , Yong Su LEE , Jae Seob LEE , Gyoo Chul JO , Myoung Geun CHA
IPC: H10K59/126 , H10K59/131 , H10K59/121
CPC classification number: H10K59/126 , H10K59/131 , H10K59/1213 , H10K59/1216
Abstract: An organic light emitting diode display includes a substrate, an overlap layer on the substrate, a semiconductor layer on the overlap layer, a first gate conductor on the semiconductor layer, a second gate conductor on the first gate conductor, a data conductor on the second gate conductor, a driving transistor on the overlap layer, and an organic light emitting diode connected with the driving transistor. The driving transistor includes, in the semiconductor layer, a first electrode, a second electrode, with a channel therebetween. A gate electrode of the first gate conductor overlaps the channel. The overlap layer overlaps the channel of the driving transistor and at least a portion of the first electrode. A storage line of the second gate conductor receives a driving voltage through a driving voltage line in the data conductor. The overlap layer receives a constant voltage.
-
公开(公告)号:US20230063106A1
公开(公告)日:2023-03-02
申请号:US17721525
申请日:2022-04-15
Applicant: Samsung Display Co., Ltd.
Inventor: Keun Woo KIM , Tae Wook KANG , Jae Seob LEE
IPC: H01L27/32
Abstract: The present disclosure relates to a display device which includes: a substrate; a semiconductor layer disposed on the substrate and including a driving transistor and a second transistor each of which including a channel, a first region, and a second region; a first gate insulating layer disposed on the semiconductor layer, a gate electrode of the second transistor disposed on the first gate insulating layer and overlapping the channel of the second transistor; a second gate insulating layer disposed on the gate electrode of the gate electrode of the second transistor; and a gate electrode of the first driving transistor disposed on the second gate insulating layer and overlapping the channel of the driving transistor.
-
公开(公告)号:US20240107808A1
公开(公告)日:2024-03-28
申请号:US18525662
申请日:2023-11-30
Applicant: Samsung Display Co., LTD.
Inventor: Keun Woo KIM , Tae Wook KANG , Han Bit KIM , Bum Mo SUNG , Do Kyeong LEE , Jae Seob LEE
IPC: H10K59/121
CPC classification number: H10K59/1213 , H10K59/1216 , H01L29/6675
Abstract: A light emitting display device includes: a light emitting element; a second transistor connected to a scan line; a first transistor which applies a current to the light emitting element; a capacitor connected to a gate electrode of the first transistor; and a third transistor connected to an output electrode of the first transistor and the gate electrode of the first transistor. Channels of the second transistor, the first transistor, and the third transistor are disposed in a polycrystalline semiconductor layer, and a width of a channel of the third transistor is in a range of about 1 μm to about 2 μm, and a length of the channel of the third transistor is in a range of about 1 μm to about 2.5 μm.
-
公开(公告)号:US20220352282A1
公开(公告)日:2022-11-03
申请号:US17868328
申请日:2022-07-19
Applicant: Samsung Display Co., Ltd.
Inventor: Mee Jae KANG , Joon Woo BAE , Thanh Tien NGUYEN , Kyoung Won LEE , Yong Su LEE , Jae Seob LEE , Gyoo Chul JO , Myoung Geun CHA
IPC: H01L27/32
Abstract: An exemplary embodiment of the present disclosure provides a display device including: a substrate; a semiconductor layer disposed on the substrate; a first transistor including a first gate electrode disposed on the semiconductor layer; a light-emitting diode connected with the first transistor; and a first layer disposed between the substrate and the semiconductor layer, wherein the semiconductor layer includes a first electrode, a second electrode, and a channel disposed between the first electrode and the second electrode, the channel includes an impurity, and the first layer overlaps the first transistor.
-
公开(公告)号:US20210304672A1
公开(公告)日:2021-09-30
申请号:US17141808
申请日:2021-01-05
Applicant: Samsung Display Co., Ltd.
Inventor: Keun Woo KIM , Tae Wook KANG , Doo Na KIM , Han Bit KIM , Jae Seob LEE , Jae Hwan CHU
IPC: G09G3/3233 , H01L27/32 , H01L29/786
Abstract: Provided is a display device. The display device comprises a substrate, and a plurality of sub-pixels disposed on the substrate and including alight emitting element and a sub-pixel circuit driving the light emitting element. The sub-pixel circuit comprises a driving transistor controlling a driving current flowing through the light emitting element, a first transistor and a second transistor connected in series between a first node, which is a drain electrode of the driving transistor, and a second node, which is a gate electrode of the driving transistor, to receive the same scan signal, and a gate auxiliary electrode disposed on a gate electrode of the first transistor or the second transistor. The gate auxiliary electrode is connected to the gate electrode of the first transistor or the second transistor.
-
-
-
-
-
-
-
-
-