公开(公告)号：US10680114B2

公开(公告)日：2020-06-09

申请号：US15071182

申请日：2016-03-15

Applicant: Samsung Display Co., Ltd.

Inventor： Su-Hyoung Kang ,  Hyun-Gue Kim ,  Jong-Jun Baek

IPC: H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L27/12 ,  G02F1/1343

Abstract: A thin film transistor includes a substrate, a gate electrode disposed on the substrate, an active pattern disposed on the gate electrode, a source electrode electrically coupled to the active pattern and a drain electrode electrically coupled to the active pattern. The active pattern includes a first channel layer overlapping the source electrode and the drain electrode and a second channel layer overlapping the gate electrode. The second channel layer includes a plurality of high electron mobility regions. An electron mobility of each of the high electron mobility regions is greater than an electron mobility of the first channel layer.