公开(公告)号：US20220102447A1

公开(公告)日：2022-03-31

申请号：US17503358

申请日：2021-10-18

Applicant: Samsung Display Co., Ltd.

Inventor： Dong-Sung LEE ,  Seo Jong OH ,  Byung Soo SO ,  Dong-min LEE

IPC: H01L27/32 ,  H01L21/02 ,  H01L29/66 ,  H01L29/786

Abstract: A method of manufacturing a polycrystalline silicon layer for a display device includes the steps of forming an amorphous silicon layer on a substrate, cleaning the amorphous silicon layer with hydrofluoric acid, rinsing the amorphous silicon layer with hydrogenated deionized water, and irradiating the amorphous silicon layer with a laser beam to form a polycrystalline silicon layer.