公开(公告)号：US20150021607A1

公开(公告)日：2015-01-22

申请号：US14087233

申请日：2013-11-22

Applicant: Samsung Display Co., Ltd.

Inventor： Young Sik Yoon ,  Youn Joon Kim ,  Seung Peom Noh ,  Sang Jo Lee ,  Ji Won Han

IPC: H01L29/786 ,  H01L27/32 ,  H01L21/28

CPC classification number: H01L27/1218 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/268 ,  H01L27/1262 ,  H01L27/3244 ,  H01L51/0097 ,  H01L51/5253

Abstract: A thin film transistor substrate includes: a polymer substrate, an oxide transparent electrode layer (TCO) formed on the polymer substrate, a barrier layer formed on the oxide transparent electrode layer, and a semiconductor layer formed on the barrier layer, in which the semiconductor layer is polysilicon. The polysilicon thin film transistor provides an oxide transparent electrode layer (TCO) which absorbs heat energy and light generated during a process of manufacturing the polysilicon thin film transistor to prevent a damage of the substrate using a polymer material.

Abstract translation: 薄膜晶体管基板包括：聚合物基板，形成在聚合物基板上的氧化物透明电极层（TCO），形成在氧化物透明电极层上的阻挡层和形成在阻挡层上的半导体层，其中半导体 层是多晶硅。 多晶硅薄膜晶体管提供氧化物透明电极层（TCO），其吸收在制造多晶硅薄膜晶体管的过程期间产生的热能和光，以防止使用聚合物材料损坏衬底。

公开(公告)号：US09425214B2

公开(公告)日：2016-08-23

申请号：US14087233

申请日：2013-11-22

Applicant: Samsung Display Co., Ltd.

Inventor： Young Sik Yoon ,  Youn Joon Kim ,  Seung Peom Noh ,  Sang Jo Lee ,  Ji Won Han

IPC: H01L29/786 ,  H01L27/32 ,  H01L21/28 ,  H01L27/12 ,  H01L21/02 ,  H01L21/268 ,  H01L51/00 ,  H01L51/52

CPC classification number: H01L27/1218 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/268 ,  H01L27/1262 ,  H01L27/3244 ,  H01L51/0097 ,  H01L51/5253

Abstract: A thin film transistor substrate includes: a polymer substrate, an oxide transparent electrode layer (TCO) formed on the polymer substrate, a barrier layer formed on the oxide transparent electrode layer, and a semiconductor layer formed on the barrier layer, in which the semiconductor layer is polysilicon. The polysilicon thin film transistor provides an oxide transparent electrode layer (TCO) which absorbs heat energy and light generated during a process of manufacturing the polysilicon thin film transistor to prevent a damage of the substrate using a polymer material.

Abstract translation: 薄膜晶体管基板包括：聚合物基板，形成在聚合物基板上的氧化物透明电极层（TCO），形成在氧化物透明电极层上的阻挡层和形成在阻挡层上的半导体层，其中半导体 层是多晶硅。 多晶硅薄膜晶体管提供氧化物透明电极层（TCO），其吸收在制造多晶硅薄膜晶体管的过程期间产生的热能和光，以防止使用聚合物材料损坏衬底。