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公开(公告)号:US20220013605A1
公开(公告)日:2022-01-13
申请号:US17486164
申请日:2021-09-27
Applicant: Samsung Display Co., Ltd.
Inventor: In Kyung YOO , Donghyun YANG , SungBae JU
Abstract: A display apparatus includes a base substrate, a thin film transistor layer on the base substrate, an insulation layer on the thin film transistor layer, a first electrode on the insulation layer and in a light emitting area, a pixel defining layer having an opening that has a size and a shape substantially same as that of the first electrode, and on the insulation layer, a light emitting layer on the first electrode, and a second electrode on the light emitting layer.
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公开(公告)号:US20200027935A1
公开(公告)日:2020-01-23
申请号:US16420930
申请日:2019-05-23
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: In Kyung YOO , Donghyun YANG , SungBae JU
Abstract: A display apparatus includes a base substrate, a thin film transistor layer on the base substrate, an insulation layer on the thin film transistor layer, a first electrode on the insulation layer and in a light emitting area, a pixel defining layer having an opening that has a size and a shape substantially same as that of the first electrode, and on the insulation layer, a light emitting layer on the first electrode, and a second electrode on the light emitting layer.
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公开(公告)号:US20210150177A1
公开(公告)日:2021-05-20
申请号:US16999672
申请日:2020-08-21
Applicant: Samsung Display Co., Ltd.
Inventor: SangJin PARK , Cha-Dong KIM , Heena KIM , Inkyung YOO , SungBae JU , Taehyeok CHOI
Abstract: An optical sensor includes: a sensing unit including a first sensing electrode, a second sensing electrode spaced apart from the first sensing electrode, and a sensing layer between the first sensing electrode and the second sensing electrode, the sensing layer containing amorphous silicon and germanium (Ge) ions impregnated in the amorphous silicon; and an optical pattern unit on the sensing unit and including a light shielding pattern and a plurality of transmission patterns in the light shielding pattern, wherein the sensing layer includes a first region, a second region, and a third region sequentially arranged from a boundary between the second sensing electrode and the sensing layer toward the first electrode, and a concentration of the germanium (Ge) ions in the amorphous silicon is relatively higher in the second region than in the first region and the third region.
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