DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20220013605A1

    公开(公告)日:2022-01-13

    申请号:US17486164

    申请日:2021-09-27

    Abstract: A display apparatus includes a base substrate, a thin film transistor layer on the base substrate, an insulation layer on the thin film transistor layer, a first electrode on the insulation layer and in a light emitting area, a pixel defining layer having an opening that has a size and a shape substantially same as that of the first electrode, and on the insulation layer, a light emitting layer on the first electrode, and a second electrode on the light emitting layer.

    DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20200027935A1

    公开(公告)日:2020-01-23

    申请号:US16420930

    申请日:2019-05-23

    Abstract: A display apparatus includes a base substrate, a thin film transistor layer on the base substrate, an insulation layer on the thin film transistor layer, a first electrode on the insulation layer and in a light emitting area, a pixel defining layer having an opening that has a size and a shape substantially same as that of the first electrode, and on the insulation layer, a light emitting layer on the first electrode, and a second electrode on the light emitting layer.

    OPTICAL SENSOR, ELECTRONIC APPARATUS INCLUDING THE SAME AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20210150177A1

    公开(公告)日:2021-05-20

    申请号:US16999672

    申请日:2020-08-21

    Abstract: An optical sensor includes: a sensing unit including a first sensing electrode, a second sensing electrode spaced apart from the first sensing electrode, and a sensing layer between the first sensing electrode and the second sensing electrode, the sensing layer containing amorphous silicon and germanium (Ge) ions impregnated in the amorphous silicon; and an optical pattern unit on the sensing unit and including a light shielding pattern and a plurality of transmission patterns in the light shielding pattern, wherein the sensing layer includes a first region, a second region, and a third region sequentially arranged from a boundary between the second sensing electrode and the sensing layer toward the first electrode, and a concentration of the germanium (Ge) ions in the amorphous silicon is relatively higher in the second region than in the first region and the third region.

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