公开(公告)号：US10797146B2

公开(公告)日：2020-10-06

申请号：US16293560

申请日：2019-03-05

Applicant: Samsung Display Co., Ltd.

Inventor： Seokhwan Bang ,  Soojung Chae ,  Kapsoo Yoon ,  Woogeun Lee ,  Sunghoon Lim

IPC: H01L27/12 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66 ,  H01L29/51

Abstract: A thin film transistor substrate includes: a substrate; an oxide semiconductor layer disposed on the substrate; a gate electrode disposed on the substrate; a gate insulating layer interposed between the oxide semiconductor layer and the gate electrode; and a source electrode and a drain electrode connected to the oxide semiconductor layer, the source electrode and the drain electrode being spaced apart from each other. The gate insulating layer includes: a first gate insulating layer having an oxygen content lower than that of a stoichiometric composition; and a second gate insulating layer including a material substantially the same as a material which the first gate insulating layer may include, and having an oxygen content higher than that of the first gate insulating layer, and the first gate insulating layer and the oxide semiconductor layer directly contact each other.