公开(公告)号：US20250048837A1

公开(公告)日：2025-02-06

申请号：US18920252

申请日：2024-10-18

Applicant: Samsung Display Co., Ltd.

Inventor： Seokkyu HAN ,  Younggil PARK ,  Jeonghun KWAK ,  Kihyun KIM ,  Sungwook WOO ,  Sunwoo LEE ,  Huiyeon CHOE

IPC: H10K59/121 ,  H01L27/12 ,  H01L29/786 ,  H10K59/131

Abstract: The display apparatus includes a substrate, a first active layer disposed on the substrate, a first gate layer disposed on a layer covering the first active layer, the first gate layer including a first gate electrode, a second gate layer disposed on a layer covering the first gate layer, the second gate layer including an initialization line including a first part of a second electrode; a second active layer disposed on a layer covering the second gate layer, the second active layer including a second active region overlapping the first part of the second electrode; a third gate layer disposed on a layer covering the second active layer, the third gate layer including a second part of the second electrode overlapping the second active region; and a first source/drain layer disposed on a layer covering the third gate layer, the first source/drain layer including a first connection line.

公开(公告)号：US20230209900A1

公开(公告)日：2023-06-29

申请号：US18116888

申请日：2023-03-03

Applicant: Samsung Display Co., Ltd.

Inventor： Seokkyu HAN ,  Younggil PARK ,  Jeonghun KWAK ,  Kihyun KIM ,  Sungwook WOO ,  Sunwoo LEE ,  Huiyeon CHOE

IPC: H10K59/121 ,  H10K59/131

CPC classification number: H10K59/1213 ,  H10K59/131 ,  H01L27/1225

Abstract: The display apparatus includes a substrate, a first active layer disposed on the substrate, a first gate layer disposed on a layer covering the first active layer, the first gate layer including a first gate electrode, a second gate layer disposed on a layer covering the first gate layer, the second gate layer including an initialization line including a first part of a second electrode; a second active layer disposed on a layer covering the second gate layer, the second active layer including a second active region overlapping the first part of the second electrode; a third gate layer disposed on a layer covering the second active layer, the third gate layer including a second part of the second electrode overlapping the second active region; and a first source/drain layer disposed on a layer covering the third gate layer, the first source/drain layer including a first connection line.

公开(公告)号：US20220005902A1

公开(公告)日：2022-01-06

申请号：US17319580

申请日：2021-05-13

Applicant: Samsung Display Co., Ltd.

Inventor： Seokkyu HAN ,  Younggil PARK ,  Jeonghun KWAK ,  Kihyun KIM ,  Sungwook WOO ,  Sunwoo LEE ,  Huiyeon CHOE

IPC: H01L27/32

Abstract: The display apparatus includes a substrate, a first active layer disposed on the substrate, a first gate layer disposed on a layer covering the first active layer, the first gate layer including a first gate electrode, a second gate layer disposed on a layer covering the first gate layer, the second gate layer including an initialization line including a first part of a second electrode; a second active layer disposed on a layer covering the second gate layer, the second active layer including a second active region overlapping the first part of the second electrode; a third gate layer disposed on a layer covering the second active layer, the third gate layer including a second part of the second electrode overlapping the second active region; and a first source/drain layer disposed on a layer covering the third gate layer, the first source/drain layer including a first connection line.

公开(公告)号：US20210384229A1

公开(公告)日：2021-12-09

申请号：US17320963

申请日：2021-05-14

Applicant: Samsung Display Co., Ltd.

Inventor： Sunwoo LEE ,  Kihyun KIM ,  Younggil PARK ,  Seulgi LEE ,  Geunhyuk CHOI ,  Jaebum HAN

IPC: H01L27/12 ,  H01L29/786

Abstract: A display apparatus includes a first silicon transistor including a first semiconductor layer including a silicon-based semiconductor and a first gate electrode; a first oxide transistor including a second semiconductor layer and a second gate electrode, the second semiconductor layer including an oxide-based semiconductor; an upper insulating layer on the first and second semiconductor layers; and a first connection electrode on the upper insulating layer, electrically connected to the first semiconductor layer through a first contact hole of the upper insulating layer, and electrically connected to the second semiconductor layer through a second contact hole of the upper insulating layer. The second semiconductor layer includes a channel region, a source region, and a drain region, and a first distance between the channel region of the second semiconductor layer and the first contact hole is about 2 μm or greater.