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    Display device
    1.
    发明授权
    Display device 有权

    公开(公告)号：US11367765B2

    公开(公告)日：2022-06-21

    申请号：US16689564

    申请日：2019-11-20

    申请人： SAMSUNG DISPLAY CO., LTD.

    发明人： Ji-Hyun Ka ,  Tae Geun Kim ,  Gyeong-Im Lee

    IPC分类号： H01L29/04 ,  H01L29/15 ,  H01L31/036 ,  H01L27/32 ,  G09G3/3233 ,  H01L51/52 ,  H01L27/12

    摘要： A display device includes a first display area including a plurality of first pixel electrodes, and a second display area including a plurality of second pixel electrodes. A first pitch in a first direction of the plurality of first pixel electrodes is smaller than a second pitch in the first direction of the plurality of second pixel electrodes, and a length in the first direction of the first pixel electrodes is smaller than a length in the first direction of the second pixel electrode.

    Organic light emitting diode display
    2.
    发明授权
    Organic light emitting diode display 有权

    公开(公告)号：US11751443B2

    公开(公告)日：2023-09-05

    申请号：US16689860

    申请日：2019-11-20

    申请人： Samsung Display Co., Ltd.

    发明人： Ji-Hyun Ka ,  Tae Geun Kim ,  Ki Myeong Eom

    IPC分类号： H10K59/131 ,  G09G3/3225 ,  H10K59/121 ,  H01L27/12

    CPC分类号： H10K59/131 ,  G09G3/3225 ,  H10K59/1213 ,  H10K59/1216 ,  G09G2300/0426 ,  G09G2300/08 ,  G09G2320/0209 ,  H01L27/1214

    摘要： An exemplary embodiment provides an organic light emitting diode display including a substrate, a bridge electrode disposed on the substrate, a buffer layer which covers the bridge electrode, a semiconductor layer disposed on the buffer layer, a first gate insulating layer which covers the semiconductor layer in a plan view, a first gate conductor disposed on the first gate insulating layer and which includes a first gate electrode, a second gate insulating layer which covers the first gate conductor, a second gate conductor disposed on the second gate insulating layer, an interlayer-insulating layer which covers the second gate conductor, and a data line disposed on the interlayer-insulating layer. The first gate electrode is directly connected to the bridge electrode, the semiconductor layer is electrically connected to the bridge electrode, and a capacitance exists between the data line and the bridge electrode.