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公开(公告)号:US20220415979A1
公开(公告)日:2022-12-29
申请号:US17573345
申请日:2022-01-11
Applicant: Samsung Display Co., Ltd.
Inventor: Nak Cho CHOI , Taek Geun LEE , Kwang Sik LEE , Yun-Kyeong IN
Abstract: The present disclosure relates to a light emitting display device including: a substrate; an anode positioned on the substrate; a black pixel defining layer, wherein an opening overlapping an anode is defined in the black pixel defining layer; an emission layer positioned in the opening of the black pixel defining layer; a spacer positioned on the black pixel defining layer and having a step; and a cathode formed on the emission layer, the black pixel defining layer, and the spacer, wherein the spacer has a first portion and a second portion having a lower height than the first portion and integrally formed with the first portion, and the end portion of the second portion is positioned closer to the opening than the end portion of the first portion.
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公开(公告)号:US20220140033A1
公开(公告)日:2022-05-05
申请号:US17398742
申请日:2021-08-10
Applicant: Samsung Display Co., Ltd.
Inventor: Eung Taek KIM , Kohei EBISUNO , Suk Hoon KU , Jin Suk LEE , Jung Mi CHOI , Young In HWANG , Tae Sik KIM , Jin Suk SEO , Hwang Sup SHIN , Taek Geun LEE , Joo Hyeon JO , Hong Jun CHOI , Hee Yeon KIM , Na Lae LEE
IPC: H01L27/32 , H01L29/792
Abstract: A display device is provided. The display device includes a first substrate, a first charge trap layer disposed on the first substrate and including silicon nitride, a semiconductor layer disposed on the first charge trap layer and including a first active layer of a first transistor and a second active layer of a second transistor, and an organic light emitting element electrically connected to the first transistor, wherein a ratio of a content of a Si element to a content of an N element in the first charge trap layer is in a range of 1.6 to 2.5.
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公开(公告)号:US20220059031A1
公开(公告)日:2022-02-24
申请号:US17397878
申请日:2021-08-09
Applicant: Samsung Display Co., Ltd.
Inventor: Eung Taek KIM , Hee Yeon KIM , Hwang Sup SHIN , Na Lae LEE , Jin Suk LEE , Taek Geun LEE , Joo Hyeon JO , Jung Mi CHOI , Hong Jun CHOI , Young In HWANG
IPC: G09G3/3233 , H01L27/32
Abstract: A display device includes a base substrate including a first substrate and a second substrate sequentially laminated, a lower semiconductor layer disposed on at least one of the first substrate and the second substrate, a buffer layer disposed on the base substrate, an active semiconductor layer disposed on the buffer layer and including a first active layer of a first transistor and a second active layer of a second transistor, a first insulating layer disposed on the active semiconductor layer, and a first conductive layer disposed on the first insulating layer and including a first gate electrode of the first transistor and a second gate electrode of the second transistor, wherein the lower semiconductor layer overlaps the first active layer, and does not overlap the second active layer.
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