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公开(公告)号:US20210175317A1
公开(公告)日:2021-06-10
申请号:US17177363
申请日:2021-02-17
发明人: Dong Hyun SON , Sung Hoon MOON , Sung Jun KIM , Kohei EBISUNO , Deok Hoi KIM , Sanghoon OH
摘要: A display apparatus includes a base substrate including a display area in which an image is displayed and a peripheral area adjacent to the display area, a source/drain pattern on the base substrate, the source/drain pattern including a connecting electrode in a pad portion of the peripheral area and a electrode of a thin film transistor in the display area, a planarization insulation layer on the base substrate, the planarization insulation layer contacting a side surface of the connecting electrode and a side surface of the electrode of the thin film transistor, and exposing a top surface of the connecting electrode, a connecting member contacting the connecting electrode, and a driving member including a driving circuit, the driving member being connected to the connecting member.
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公开(公告)号:US20220320199A1
公开(公告)日:2022-10-06
申请号:US17523314
申请日:2021-11-10
发明人: Jin-Suk LEE , Kohei EBISUNO , Jong Min LEE , Yong Ho YANG
IPC分类号: H01L27/32
摘要: A display device includes a substrate including an opening area, a peripheral area adjacent to the opening area, and a display area adjacent to the peripheral area; a semiconductor layer overlapping the display area, disposed on the substrate, and including a channel; a gate electrode overlapping the channel of the semiconductor layer; an insulating layer disposed on the gate electrode, and including a first inorganic insulating layer and a second inorganic insulating layer disposed on the first inorganic insulating layer; a first electrode disposed on the insulating layer; an emission layer disposed on the first electrode; and a second electrode disposed on the emission layer, wherein the second inorganic insulating layer is not disposed in at least a portion of an open region in which the emission layer and the second electrode are disconnected in the peripheral area.
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公开(公告)号:US20190252420A1
公开(公告)日:2019-08-15
申请号:US16273374
申请日:2019-02-12
发明人: Jun Hee LEE , Sung Hoon MOON , Dong Hyun SON , Pil Soo AHN , Kohei EBISUNO , Sang Hoon OH
IPC分类号: H01L27/12 , H01L27/32 , H01L29/786 , H01L51/00
CPC分类号: H01L27/1262 , H01L27/3246 , H01L29/78603 , H01L51/0097 , H01L51/56 , H01L2227/323 , H01L2251/5338
摘要: A method for fabricating a thin film transistor substrate includes forming a buffer layer including at least one film on a base substrate, planarizing a surface of the buffer layer, and forming a thin film transistor on the buffer layer.
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公开(公告)号:US20240196681A1
公开(公告)日:2024-06-13
申请号:US18585660
申请日:2024-02-23
发明人: Dong Hyun SON , Sung Hoon MOON , Sung Jun KIM , Kohei EBISUNO , Deok Hoi KIM , Sanghoon OH
IPC分类号: H10K59/131 , H10K50/844 , H10K59/12 , H10K59/124 , H10K59/40 , H10K71/00 , H10K77/10 , H10K102/00
CPC分类号: H10K59/131 , H10K50/844 , H10K59/124 , H10K59/40 , H10K71/00 , H10K77/111 , H10K59/1201 , H10K2102/311
摘要: A display apparatus includes a base substrate including a display area in which an image is displayed and a peripheral area adjacent to the display area, a source/drain pattern on the base substrate, the source/drain pattern including a connecting electrode in a pad portion of the peripheral area and a electrode of a thin film transistor in the display area, a planarization insulation layer on the base substrate, the planarization insulation layer contacting a side surface of the connecting electrode and a side surface of the electrode of the thin film transistor, and exposing a top surface of the connecting electrode, a connecting member contacting the connecting electrode, and a driving member including a driving circuit, the driving member being connected to the connecting member.
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公开(公告)号:US20240090265A1
公开(公告)日:2024-03-14
申请号:US18508151
申请日:2023-11-13
发明人: Jinsuk Lee , Jin Jeon , Sugwoo Jung , Shinbeom Choi , Youngin Hwang , Byungno Kim , Heeyeon Kim , Kohei EBISUNO , Nalae Lee , Illhwan Lee , Jongmin Lee , Joohyeon Jo , Changha Kwak , Yongseon Jo
IPC分类号: H10K59/121 , H10K77/10
CPC分类号: H10K59/1213 , H10K77/111 , H01L27/1218
摘要: Provided are a thin film transistor substrate which include a substrate, a buffer layer and a thin film transistor, a display apparatus including the thin film transistor substrate, and a method of manufacturing the display apparatus including the thin film transistor substrate. The buffer layer includes an inorganic insulating layer. An area ratio of a peak corresponding to an N—H bond in the buffer layer is 0.5% or less based on a total peak area in a Fourier transform infrared spectroscopy (FTIR).
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公开(公告)号:US20230147378A1
公开(公告)日:2023-05-11
申请号:US18093861
申请日:2023-01-06
发明人: Dong Hyun SON , Sung Hoon MOON , Sung Jun KIM , Kohei EBISUNO , Deok Hoi KIM , Sanghoon OH
IPC分类号: H10K59/131 , H10K50/844 , H10K59/40 , H10K59/124 , H10K71/00 , H10K77/10
CPC分类号: H10K59/131 , H10K50/844 , H10K59/40 , H10K59/124 , H10K71/00 , H10K77/111 , H10K59/1201
摘要: A display apparatus includes a base substrate including a display area in which an image is displayed and a peripheral area adjacent to the display area, a source/drain pattern on the base substrate, the source/drain pattern including a connecting electrode in a pad portion of the peripheral area and a electrode of a thin film transistor in the display area, a planarization insulation layer on the base substrate, the planarization insulation layer contacting a side surface of the connecting electrode and a side surface of the electrode of the thin film transistor, and exposing a top surface of the connecting electrode, a connecting member contacting the connecting electrode, and a driving member including a driving circuit, the driving member being connected to the connecting member.
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公开(公告)号:US20210265438A1
公开(公告)日:2021-08-26
申请号:US17034252
申请日:2020-09-28
发明人: Jinsuk Lee , Jin Jeon , Sugwoo Jung , Shinbeom Choi , Youngin Hwang , Byungno Kim , Heeyeon Kim , Kohei EBISUNO , Nalae Lee , Illhwan Lee , Jongmin Lee , Joohyeon Jo , Changha Kwak , Yongseon Jo
摘要: Provided are a thin film transistor substrate which include a substrate, a buffer layer and a thin film transistor, a display apparatus including the thin film transistor substrate, and a method of manufacturing the display apparatus including the thin film transistor substrate. The buffer layer includes an inorganic insulating layer. An area ratio of a peak corresponding to an N—H bond in the buffer layer is 0.5% or less based on a total peak area in a Fourier transform infrared spectroscopy (FTIR).
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公开(公告)号:US20220359573A1
公开(公告)日:2022-11-10
申请号:US17541196
申请日:2021-12-02
发明人: Kohei EBISUNO , Jin-Suk LEE , Jong Min LEE , Jun Young KIM , Yong Ho YANG
摘要: A display device includes: a substrate including a display area and a non-display area; a transistor and a light emitting element, which are disposed on the display area; a pad portion disposed in the non-display area, where the pad portion includes a first metal pattern; and a printed circuit board or a data driver, which is connected with the pad portion. The transistor includes a semiconductor layer disposed on the substrate and a source electrode or a drain electrode which is electrically connected with the semiconductor layer. The source electrode or the drain electrode includes a first layer including a first metal, a second layer including a second metal, and a third layer including the first metal, where the first metal pattern includes the first metal, and is connected with the printed circuit board or the data driver.
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公开(公告)号:US20220246701A1
公开(公告)日:2022-08-04
申请号:US17474056
申请日:2021-09-14
发明人: Jin-Suk LEE , Kohei EBISUNO , Jong Min LEE
摘要: A display device includes: a substrate including a display area and a peripheral area surrounding an opening; a transistor disposed in the display area; a first electrode electrically connected to the transistor; an auxiliary layer disposed between the transistor and the first electrode and overlapping the first electrode in a plan view; a pixel definition layer overlapping the first electrode and an edge of the auxiliary layer in the plan view; an intermediate layer, an emission layer, and a second electrode disposed on the first electrode; at least one or more dams disposed on the peripheral area; and an encapsulation layer disposed on the light-emitting element. The intermediate layer includes a cutting part disposed between the display area and the opening.
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公开(公告)号:US20220140033A1
公开(公告)日:2022-05-05
申请号:US17398742
申请日:2021-08-10
发明人: Eung Taek KIM , Kohei EBISUNO , Suk Hoon KU , Jin Suk LEE , Jung Mi CHOI , Young In HWANG , Tae Sik KIM , Jin Suk SEO , Hwang Sup SHIN , Taek Geun LEE , Joo Hyeon JO , Hong Jun CHOI , Hee Yeon KIM , Na Lae LEE
IPC分类号: H01L27/32 , H01L29/792
摘要: A display device is provided. The display device includes a first substrate, a first charge trap layer disposed on the first substrate and including silicon nitride, a semiconductor layer disposed on the first charge trap layer and including a first active layer of a first transistor and a second active layer of a second transistor, and an organic light emitting element electrically connected to the first transistor, wherein a ratio of a content of a Si element to a content of an N element in the first charge trap layer is in a range of 1.6 to 2.5.
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