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公开(公告)号：US20230354687A1
公开(公告)日：2023-11-02
申请号：US18308740
申请日：2023-04-28
发明人： Gugrae Jo , Hyoungsik Kim , Woojin Cho , Jongsoon Lee , Hongjae Lee , Kyusang Kim , Seonjeong Kim , Heejeon Ma , Wonil Park , Kicheon Byun , Woojin Lee
CPC分类号： H10K71/621 , H10K59/1201
摘要： A method of manufacturing a display apparatus includes forming a semiconductor layer on a substrate, forming an insulating layer on the semiconductor layer, forming a photoresist pattern on the insulating layer, forming, by etching the insulating layer, a contact hole exposing at least a portion of the semiconductor layer, and performing a primary cleaning of the insulating layer in which the contact hole is formed using a cleaning gas including a fluorine-containing gas and a hydrogencontaining gas.
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2.发明公开公开(公告)号：US20230395365A1
公开(公告)日：2023-12-07
申请号：US18205370
申请日：2023-06-02
发明人： Gugrae Jo , Hyoungsik Kim , Woojin Cho , Jongsoon Lee , Hongjae Lee , Kyusang Kim , Seonjeong Kim , Heejeon Ma , Wonil Park , Kicheon Byun , Woojin Lee
CPC分类号： H01L21/02049 , H10K59/1201 , H01L27/1262 , B08B5/00 , B08B7/0071 , B08B7/04 , B08B13/00 , B08B7/0014
摘要： A method of manufacturing a display apparatus, the method includes removing an oxide layer formed on a surface of a substrate by utilizing a hydrofluoric acid gas and an ammonia gas, and thermally treating the substrate from which the oxide layer has been removed. A flow ratio between the hydrofluoric acid gas and the ammonia gas is about 0.8:1 to about 1:1.
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